Abstract: A planetary gearset (6) has a sun gear (10) connected rotationally fixedly to an input shaft (8), a carrier (15) that carries planetary gears (11) and is connected rotationally fixedly to an output shaft (16), and a ring gear (14) fixedly connected to a housing (4) that encloses the planetary gearset (6). To reduce the noise emission from the planetary gearset with as little structural complexity as possible without reducing its efficiency due to pressure rings that are guided and slide against the planetary gears and the carrier, the sun gear (10), the planetary gears (11) and the ring gear (14) are provided with helical teeth and the input shaft (8) is at least indirectly supported on the housing (4), in both axial directions, by way of a single roller bearing (20).

Abstract: A planetary gearset (6) has a sun gear (10) connected rotationally fixedly to an input shaft (8), a carrier (15) that carries planetary gears (11) and is connected rotationally fixedly to an output shaft (16), and a ring gear (14) fixedly connected to a housing (4) that encloses the planetary gearset (6). To reduce the noise emission from the planetary gearset with as little structural complexity as possible without reducing its efficiency due to pressure rings that are guided and slide against the planetary gears and the carrier, the sun gear (10), the planetary gears (11) and the ring gear (14) are provided with helical teeth and the input shaft (8) is at least indirectly supported on the housing (4), in both axial directions, by way of a single roller bearing (20).

Abstract: In order to improve a method of analyzing Si—Ge alloys, with which a Raman spectrum of a sample is recorded and Raman frequencies and Raman intensities of the Si—Si modes and the Si—Ge modes of the alloy layer are evaluated, such that any strain and any Ge portion in an alloy layer can be ascertained in a simple and as exact a manner as possible, it is provided for one or more spectrum contributions lying outside the Si—Ge modes and the Si—Si modes to be evaluated as oscillation modes.

Abstract: In order to improve a method of analyzing Si—Ge alloys, with which a Raman spectrum of a sample is recorded and Raman frequencies and Raman intensities of the Si—Si modes and the Si—Ge modes of the alloy layer are evaluated, such that any strain and any Ge portion in an alloy layer can be ascertained in a simple and as exact a manner as possible, it is provided for one or more spectrum contributions lying outside the Si—Ge modes and the Si—Si modes to be evaluated as oscillation modes.

Abstract: In order to so improve a process for the manufacture of a layer on a substrate wherein by means of a pulsed laser beam a coating material is ablated from a carrier, transported in the form of a current of particles to the substrate and deposited on the latter to form the layer, that it is suitable for the manufacture of thin precision layers, preferably in a defined number of atom layers, as is, for example, required in the manufacture of semiconductors, it is proposed that the layer be manufactured as thin precision layer by pulse duration and pulse intensity of the laser beam being selected such that ionization and heating-up of the coating material take place essentially only in the zone of interaction of the laser light with the coating material so the stream of particles is formed as cluster-free plasma containing single, non-coherent ions or atoms.