Patents by Inventor Manfred Moert

Manfred Moert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090153882
    Abstract: Dimensional parameters of structures on a substrate are measured by providing a substrate with a structured surface. The structured surface includes a number of juxtaposed structural elements. A radiation source is configured to emit a beam of radiation having a wavelength in the infrared range. The substrate is illuminated with the beam of radiation. A signal corresponding to a part of the beam of radiation being transmitted through the substrate is detected. Dimensional parameters of the structural elements are calculated based on the transmitted beam signal.
    Type: Application
    Filed: December 14, 2007
    Publication date: June 18, 2009
    Inventors: Thomas Geiler, Manfred Moert
  • Patent number: 7230241
    Abstract: The invention relates to a method for matching a first measurement method for measuring structure widths of trapezoidally tapering structures on a substrate wafer to a second measurement method for measuring the structure widths. This is performed in order to obtain measured values for the structure width which are comparable with one another. The second measurement method is suitable for measuring a second structure width at an unknown second height above the surface of the substrate, and the first measurement method is suitable for measuring a first structure width at a first height, the first height being settable.
    Type: Grant
    Filed: February 8, 2005
    Date of Patent: June 12, 2007
    Assignee: Infineon Technologies AG
    Inventors: Manfred Moert, Thomas Hingst
  • Publication number: 20050189489
    Abstract: Method for matching two measurement methods for measuring structure widths on a substrate The invention relates to a method for matching a first measurement method for measuring structure widths of trapezoidally tapering structures on a substrate wafer to a second measurement method for measuring the structure widths. This is performed in order to obtain measured values for the structure width which are comparable with one another. The second measurement method is suitable for measuring a second structure width at an unknown second height above the surface of the substrate, and the first measurement method is suitable for measuring a first structure width at a first height, the first height being settable.
    Type: Application
    Filed: February 8, 2005
    Publication date: September 1, 2005
    Applicant: Infineon Technologies AG
    Inventors: Manfred Moert, Thomas Hingst
  • Patent number: 6649424
    Abstract: A method of fabricating semiconductor circuits having integrated capacitors that have a dielectric or a ferroelectric material between electrodes. The materials are subjected to heat treatment at high temperatures in an oxygen atmosphere for the purpose of crystallization. The dielectric or ferroelectric is heated separately from the semiconductor substrate, is comminuted into small particles and only afterward applied in this form to the semiconductor substrate. This makes it possible to integrate substances with arbitrarily high crystallization temperature without damaging the integrated semiconductor circuit, since the semiconductor substrate itself does not have to be heated. Diffusion barriers for oxygen are unnecessary. Previous limitations on the capacitor capacitance are obviated owing to the free choice of dielectric or ferroelectric made possible, and the packing density of the capacitors is increased.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: November 18, 2003
    Assignee: Infineon Technologies AG
    Inventors: Manfred Mört, Walter Hartner, Volker Weinrich, Günther Schindler