Abstract: Dimensional parameters of structures on a substrate are measured by providing a substrate with a structured surface. The structured surface includes a number of juxtaposed structural elements. A radiation source is configured to emit a beam of radiation having a wavelength in the infrared range. The substrate is illuminated with the beam of radiation. A signal corresponding to a part of the beam of radiation being transmitted through the substrate is detected. Dimensional parameters of the structural elements are calculated based on the transmitted beam signal.

Abstract: The invention relates to a method for matching a first measurement method for measuring structure widths of trapezoidally tapering structures on a substrate wafer to a second measurement method for measuring the structure widths. This is performed in order to obtain measured values for the structure width which are comparable with one another. The second measurement method is suitable for measuring a second structure width at an unknown second height above the surface of the substrate, and the first measurement method is suitable for measuring a first structure width at a first height, the first height being settable.

Abstract: Method for matching two measurement methods for measuring structure widths on a substrate The invention relates to a method for matching a first measurement method for measuring structure widths of trapezoidally tapering structures on a substrate wafer to a second measurement method for measuring the structure widths. This is performed in order to obtain measured values for the structure width which are comparable with one another. The second measurement method is suitable for measuring a second structure width at an unknown second height above the surface of the substrate, and the first measurement method is suitable for measuring a first structure width at a first height, the first height being settable.