Patents by Inventor Manfred Mundbrod-Vangerow
Manfred Mundbrod-Vangerow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8436393Abstract: A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.Type: GrantFiled: April 4, 2011Date of Patent: May 7, 2013Assignee: Osram GmbHInventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
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Publication number: 20110175058Abstract: A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.Type: ApplicationFiled: April 4, 2011Publication date: July 21, 2011Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
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Patent number: 7939844Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.Type: GrantFiled: May 30, 2007Date of Patent: May 10, 2011Assignee: OSRAM GmbHInventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
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Patent number: 7691659Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.Type: GrantFiled: February 25, 2005Date of Patent: April 6, 2010Assignee: Osram GmbHInventors: Stefan Bader, Berthold Hahn, Volker Härle, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow, Dominik Eisert
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Patent number: 7319247Abstract: An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only.Type: GrantFiled: March 16, 2001Date of Patent: January 15, 2008Assignee: Osram GmbHInventors: Stefan Bader, Berthold Hahn, Volker Härle, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
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Publication number: 20070221936Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a -doped layer (5). The p-doped layer (5) is provided, on its main surface (9)facing away from the active region (19), with a reflective contact metallization (6)comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.Type: ApplicationFiled: May 30, 2007Publication date: September 27, 2007Applicant: Osram GmbHInventors: BERTHOLD HAHN, Ulrich Jacob, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow
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Patent number: 7265392Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.Type: GrantFiled: May 28, 2001Date of Patent: September 4, 2007Assignee: Osram GmbHInventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
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Publication number: 20070145402Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At least one recess is made in the window, which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window or of the recess is provided at least partially with a contact surface. Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings.Type: ApplicationFiled: March 9, 2007Publication date: June 28, 2007Inventors: Dominik Eisert, Volker Harle, Frank Kuhn, Manfred Mundbrod-Vangerow, Uwe Strauss, Jacob Ulrich, Ernst Nirschl, Norbert Linder, Reinhard Sedlmeier, Ulrich Zehnder, Johannes Baur
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Patent number: 7205578Abstract: This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4). At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).Type: GrantFiled: February 15, 2001Date of Patent: April 17, 2007Assignee: Osram GmbHInventors: Dominik Eisert, Volker Härle, Frank Kühn, Manfred Mundbrod-Vangerow, Uwe Strauss, Jacob Ulrich, Ernst Nirschl, Norbert Linder, Reinhard Sedlmeier, Ulrich Zehnder, Johannes Baur
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Patent number: 7195942Abstract: Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence.Type: GrantFiled: May 3, 2004Date of Patent: March 27, 2007Assignee: Osram GmbHInventors: Dominik Eisert, Volker Haerle, Frank Kuehn, Manfred Mundbrod-Vangerow, Uwe Strauss, Ulrich Zehnder
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Publication number: 20070012944Abstract: An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence is provided on substantially the full area of its p-side with a reflective, bondable p-contact layer. The substrate is provided on its main surface facing away from the epitaxial layer sequence with a contact metallization that covers only a portion of said main surface, and the decoupling of light from the chip takes place via a bare region of the main surface of the substrate and via the chip sides. A further LED chip has epitaxial layers only. The p-type epitaxial layer is provided on substantially the full area of the main surface facing away from the n-conductive epitaxial layer with a reflective, bondable p-contact layer, and the n-conductive epitaxial layer is provided on its main surface facing away from the p-conductive epitaxial layer with an n-contact layer that covers only a portion of said main surface.Type: ApplicationFiled: August 23, 2006Publication date: January 18, 2007Inventors: Stefan Bader, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow
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Publication number: 20060011925Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.Type: ApplicationFiled: February 25, 2005Publication date: January 19, 2006Inventors: Stefan Bader, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow, Dominik Eisert
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Publication number: 20050282373Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.Type: ApplicationFiled: February 25, 2005Publication date: December 22, 2005Inventors: Stefan Bader, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow, Dominik Eisert
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Patent number: 6878563Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.Type: GrantFiled: March 16, 2001Date of Patent: April 12, 2005Assignee: Osram GmbHInventors: Stefan Bader, Berthold Hahn, Volker Härle, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow, Dominik Eisert
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Publication number: 20050003565Abstract: Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence.Type: ApplicationFiled: May 3, 2004Publication date: January 6, 2005Inventors: Dominik Eisert, Volker Haerle, Frank Kuehn, Manfred Mundbrod-Vangerow, Uwe Strauss, Ulrich Zehnder
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Patent number: 6730939Abstract: A radiation-emitting semiconductor device with a multilayer structure comprising a radiation-emitting active layer, with electrical contacts for impressing a current in the multilayer structure and with a radiotransparent window layer. The window layer is arranged exclusively on the side of the multilayer structure facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer encompassing the second side wall portion forms a mounting pedestal for the semiconductor device.Type: GrantFiled: February 12, 2001Date of Patent: May 4, 2004Assignee: Osram Opto Semiconductors GmbHInventors: Dominik Eisert, Volker Haerle, Frank Kuehn, Manfred Mundbrod-Vangerow, Uwe Strauss, Ulrich Zehnder
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Publication number: 20040056254Abstract: This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).Type: ApplicationFiled: January 7, 2003Publication date: March 25, 2004Inventors: Stefan Bader, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow, Dominik Eisert
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Publication number: 20040026709Abstract: An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only.Type: ApplicationFiled: June 10, 2003Publication date: February 12, 2004Inventors: Stefan Bader, Berthold Hahn, Volker Harle, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow
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Publication number: 20030173575Abstract: Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical deviceType: ApplicationFiled: February 12, 2001Publication date: September 18, 2003Inventors: Dominik Eisert, Volker Haerle, Frank Kuehn, Manfred Mundbrod-Vangerow, Uwe Strauss, Ulrich Zehnder
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Publication number: 20030168664Abstract: A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.Type: ApplicationFiled: January 16, 2003Publication date: September 11, 2003Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jurgen Lugauer, Manfred Mundbrod-Vangerow