Abstract: The invention relates to a procedure for operating a bus system, as well as a bus system with a line, and two adjoining lines, whereby the lines each comprise two line sections, which are connected with one another by means of a line amplifier and/or buffer device, and whereby the line amplifier and/or buffer device connected with the line sections of the line is constructed as an inverting line amplifier and/or buffer device, and the line amplifier and/or buffer devices connected with the line sections of the adjoining lines are constructed as non-inverting line amplifier and/or buffer devices, or vice versa.

Abstract: A semiconductor memory apparatus includes a memory cell array having a multiplicity of data lines and a multiplicity of local amplifiers, each of the local amplifiers being associated with a data line. An amplifier group includes at least two amplifiers selected from the multiplicity of local amplifiers. Each amplifier has at least a pair of selection transistors for selecting a particular amplifier from the amplifier group. The selection transistors have a common gate, an unshared intrinsic diffusion region, and a shared intrinsic diffusion region, the shared intrinsic diffusion region being shared with an adjacent selection transistor from an adjacent amplifier.

Abstract: A semiconductor memory apparatus includes a memory cell array having a multiplicity of data lines and a multiplicity of local amplifiers, each of the local amplifiers being associated with a data line. An amplifier group includes at least two amplifiers selected from the multiplicity of local amplifiers. Each amplifier has at least a pair of selection transistors for selecting a particular amplifier from the amplifier group. The selection transistors have a common gate, an unshared intrinsic diffusion region, and a shared intrinsic diffusion region, the shared intrinsic diffusion region being shared with an adjacent selection transistor from an adjacent amplifier.

Abstract: A memory configuration is divided into memory blocks and allows a flexible access to redundant memory locations by using both, redundant column lines and redundant row lines of a particular memory block to repair defects of another memory block. Thus more defects can be repaired in the other memory block than there are redundant memory locations present in the other memory block. A method of accessing redundant memory locations is also provided. The memory configuration and the method of accessing redundant memory locations can be used in all memory architectures that write or read one or more bits of information per address in a parallel manner.