Abstract: A memory chip having an integrated address scrambler unit that has address inputs for applying an address and can be to scramble the address in various ways depending on control bits. In addition, a memory cell array is provided, which is connected downstream of the address scrambler unit. This allows an increase in flexibility during scrambling.

Abstract: An integrated circuit, in particular, an integrated memory, contains a control circuit for ascertaining an operating state of the circuit. A self-repair circuit, which is connected to the control circuit, is used to implement self-test and self-repair operation for checking the functioning of, and repairing, defective circuit sections of the integrated circuit. After a supply voltage has been applied to the integrated circuit, the control circuit ascertains an operating state of the integrated circuit and, in a manner dependent thereon, the self-repair circuit is activated by the control circuit in a self-controlling manner in order to put the integrated circuit into a self-repair mode for implementing self-test and self-repair operation. The integrated circuit can be tested for its functionality and repaired even after being soldered onto a module substrate.

Abstract: A circuit arrangement for setting a voltage supply for a read/write amplifier of an integrated memory has a first voltage generator circuit for generating a supply voltage for application to the read/write amplifier during an assessment and amplification operation and a second voltage generator circuit for generating a precharge voltage for precharging bit lines of the memory which are connected to the read/write amplifier. A temperature detector circuit, which is connected to the first voltage generator circuit, is used to detect a temperature of the memory and interacts with the first voltage generator circuit to set the supply voltage applied to the read/write amplifier in a manner depending on a temperature of the memory.

Abstract: An integrated dynamic memory includes memory cells which are combined to form individual independently addressable units, and a control circuit for controlling a refresh mode for the memory cells. The memory cells can have their memory cell content refreshed. The control circuit is designed such that one or more units of memory cells can be subject to a refresh mode in parallel in a refresh cycle. The control circuit sets a number of memory cell units, which are to be refreshed in parallel in a refresh cycle based on a temperature reference value. A maximum possible operating temperature for a memory chip can be increased without additional restrictions on memory access.

Abstract: A test apparatus for testing integrated modules has a plurality of connection locations on a carrier substrate. An integrated module may be connected, via a connection location, to a test unit connected to the carrier substrate. The connection locations are arranged in groups within a connection array. A control terminal via which an integrated module may be selected for a test can be provided for each connection location. An address and command terminal can be provided for each connection location. The modules of the number of groups, which are simultaneously operated, are connected to the address and command bus via the respective switching means or switch. The test frequency can thus be increased without adversely affecting the driver load.

Abstract: An integrated memory has individually addressable normal and redundant units of memory cells. A memory unit is used to store, in a normal mode, an address for one of the normal units which needs to be replaced by one of the redundant units. A comparison unit compares an address which is present on an address bus with an address stored in the memory unit and activates one of the redundant units in the event of a match being identified. The memory also has a test circuit which can be activated by a test mode signal, can reset the memory unit to an initial state, and can store an address for one of the redundant units in the memory unit for subsequently writing an identification code to this redundant unit.

Abstract: The device according to the invention in each case has a temperature sensor for detecting the temperatures of the memory modules, which is arranged in the memory modules. In addition, a memory control module is provided, which, in order to evaluate the temperatures, is connected to the memory modules via a measurer or means for determining the highest operating temperature of the memory modules. The memory control module is designed and can be operated such that an adaptation operation is initiated, if the highest operating temperature exceeds a specific value.

Abstract: An additional test mode is introduced in a semiconductor memory. A multiplicity of word lines are simultaneously activated by a word line decoder in the test mode. After a potential equalization of complementary bit lines, a logic “0” or a logic “1” is applied to an equalization circuit via a voltage generator. It is thus possible for the entire memory cell array to be preallocated an identical data value or, in strip form, alternating data values. Test time is thereby saved.

Abstract: An integrated memory has a memory cell array having word lines and bit lines. The bit lines are organized in bit line pairs. The bit lines of the bit line pairs cross one another at a crossing location and run parallel to one another. A sense amplifier is connected to one of the bit line pairs at one end. Two precharge circuits are provided. One precharge circuit is arranged on a side of the crossing location and the other precharge circuit is arranged on a side of the crossing location. The precharge circuit facing the sense amplifier is arranged at a first distance from the crossing location and at a second distance from the sense amplifier. The RC constant of the bit lines, which is effective during the precharge operation, is reduced, so that the time period required for a precharge operation is reduced.

Abstract: A circuit arrangement can have a number of integrated circuit components, which are arranged on a carrier substrate. A reception circuit for receiving a control signal can be coupled to one of the connection pads on the input side and can be connected to each of the circuit components on the output side. A bridging circuit controlled by a test mode signal can electrically bridge the reception circuit. In a testing method, a plurality of connection pads can be connected to a first potential and at least one of the connection pads can be connected to a second potential. The bridging circuit can be activated and the current measured, by a test arrangement, at the at least one of the connection pads. Inspection for leakage currents in connections between input-side reception circuits and the circuit components can be measured.

Abstract: A voltage generator arrangement supplies a largely constant output voltage with a high current driver capability. A bandgap reference circuit drives a voltage generator on the output side, if necessary via an impedance converter. The bandgap reference circuit and the impedance converter on the one hand, and the voltage generator on the other hand, are connected to different reference ground potential lines. The voltage generator on the output side is preceded by a correction circuit, which corrects for the voltage drop on that reference ground potential line to which the output-side voltage generator is connected. The voltage generator arrangement is suitable for a greater integration density.

Abstract: A voltage generator arrangement supplies a largely constant output voltage with a high current driver capability. A bandgap reference circuit is downstream from an impedance converter and downstream a voltage generator. The bandgap reference circuit and the impedance converter on the one hand and the voltage generator on the other hand are connected to different reference ground potential line. The impedance converter contains a charge pump circuit to provide increased control potential, which drives the voltage generator. The voltage generator in contrast produces a reduced output potential. The influence of any voltage drop on that reference ground potential line to which the voltage generator is connected in the output potential is thus likewise reduced.

Abstract: A dynamic RAM semiconductor memory with a shared sense amplifier organization concept, in which the cell arrays are subdivided into blocks whose bit lines are connected in pairs from two adjacent blocks in each case to a common sense amplifier and the sense amplifiers are disposed between the cell blocks. In which case bit line switches are disposed in sense amplifier strips—lying between the blocks—between in each case two adjacent sense amplifiers in order to momentarily connect the other ends—not connected to the sense amplifiers—of two bit line pairs from the adjacent cell blocks during a precharge phase of a bit line pair activated directly beforehand. The precharge phase takes place at the start of a charge equalization phase.

Abstract: An integrated memory circuit has a memory cell array and a test circuit. The memory cell array is formed with memory areas each having a number of cells. The test circuit generates error information during testing of an addressed memory area. The error information indicates if at least one of the cells of the addressed memory area is faulty. A storage element is provided which, given the occurrence of an error in the addressed memory area, stores information with the aid of which the faulty memory cell of the faulty area can be identified.

Abstract: An additional test mode is introduced in a semiconductor memory. A multiplicity of word lines are simultaneously activated by a word line decoder in the test mode. After a potential equalization of complementary bit lines, a logic “0” or a logic “1” is applied to an equalization circuit via a voltage generator. It is thus possible for the entire memory cell array to be preallocated an identical data value or, in strip form, alternating data values. Test time is thereby saved.

Abstract: The cell array of a semiconductor memory, in particular of a DRAM, has word lines and bit lines, whose intersections define the cells of the cell array. A test data pattern is written to all the cells of a word line at the same time.

Abstract: Outer and inner soles and a sole welt are molded onto shoe uppers. A molded outer sole is formed by injection molding plasticized thermoplastic material into a first mold cavity defined by a first mold part at an end of a pivotable mold carrier and a confronting mold plate. A molded sole welt closed on itself is formed on a last supported shoe upper by injection molding plasticized thermoplastic material into a sole welt mold cavity defined by an opposed pair of first lateral mold elements closed against the shoe upper while a second mold part at an opposite end of the mold carrier confronts the shoe upper and the lateral mold elements. The mold carrier is shifted away from the lateral mold elements and pivoted to confront the first mold part and the molded outer sole to the shoe upper. An inner sole mold cavity is formed with the molded outer sole by closing an opposed pair of second lateral mold elements located between the first lateral elements and the first mold part.

Abstract: An apparatus for molding an outer sole of elastomer and an inner sole of a mixture of isocyanate and a polyol reacting into polyurethane to shoe uppers includes a vertically movable upper cross block supporting a pivotably mounted mold carrier with a heatable first mold part at one end for the molding of outer soles, and a lower, vertically adjustable cross block has a heatable plate in contact with the first mold part. The mold carrier is pivoted such that the heatable first mold part containing the molded outer sole forms a mold cavity for an inner sole together with laterally movable mold elements and a last supported shoe upper.