Abstract: A light emitting semiconductor device according the invention includes an SOI substrate, a collector and an injector. The SOI substrate includes a carrier layer, a buried oxide layer on the carrier layer, and a doped silicon layer structure with a conductivity type. The doped silicon layer structure with the conductivity type includes at least two silicon- or silicon germanium layers arranged adjacent to one another, wherein a dislocation network is configured in their interface portions at which dislocation network a radiative charge carrier combination with a light energy is provided, which light energy is smaller than a band gap energy of the silicon- or silicon germanium layers. The collector is formed as a pn-junction in a portion between the dislocation network and a surface of the silicon layer structure that is oriented away from the carrier layer, and wherein the injector is configured as a metal insulator semiconductor diode.

Abstract: A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2?T) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2?T) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate su

Abstract: A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2?T) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2?T) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate su

Abstract: A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.

Abstract: A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.

Abstract: A method of selecting one server (S1-S4) out of a server set for the purpose of requesting one or more service/s, for example related to an internet- and session-based application, each of the servers (S1-S4) of the server set being capable of supporting the service/s, whereby a status vector is maintained which comprises a timestamp value (t1-t4) indicating a point of time at which the status of the corresponding server (S1-S4) is determined, to improve over existing server selection policies in its ability to reduce transaction control times.

Abstract: The invention relates to a method for producing highly ordered pore structures in porous aluminium oxide using a nano-imprint stamp and also to a method for the manufacturing of the stamp and to the stamp itself.

Abstract: In a method for communicating information from e-mails which are intended for a subscriber of a telecommunication network and are filed in an e-mail service, subsequent to the activation of a corresponding service, e-mail messages arriving in the e-mail service for the subscriber are at least partially converted into speech, forwarded to a voice mail service and loaded there as a spoken message. In a suitable telecommunication system, an e-mail/voice mail converter is provided, which is arranged for the at least partial conversion of e-mail messages into speech and/or speech into digital written form, a control logic being provided for the actuation of the converter by comma nd messages of a subscriber.

Abstract: A method and communication system for the first-time entry of subscriber data of a mobile subscriber into a central subscriber data base wherein entry composed of a special telephone number and of blocking information for temporarily barring calls for the mobile subscriber is formed in at least one central subscriber data base and is transferred into a decentralized subscriber data base that is the first one responsible for the location registration for the mobile radio telephone subscriber on the basis of his current location. As soon as the mobile subscriber makes an outgoing call for the first time via a radio telephone subscriber station, a connection setup occurs to a calling point on the basis of the special telephone number stored in the decentralized subscriber data base. The subscriber data, including a mobile subscriber telephone number is entered into the central subscriber data base via the calling point, and the blocking information reset therein and the special telephone number is deleted.

Abstract: The amount of formic acid ester produced by the Oxo Process is reduced and the amount of alcohol is increased when the reaction product of said process, in contact with a copper/nickel supported catalyst, is subjected to elevated temperatures. Such catalysts are also useful for the conversion, by hydrogenation, of formyl esters to their corresponding alcohols.