Abstract: A filter system is for the local attenuation of X-radiation. In an embodiment, the filter system includes a filter device, arranged in a beam path of an X-ray apparatus and including a channel arrangement, the channel arrangement including a multiplicity of channel sections extending in parallel on a plane; a supply device to provide a 2-phase fluid flow containing drops of an absorber liquid, to absorb X-radiation and a carrier liquid transparent to X-radiation; and a sorting section, including an input connected to the supply device, a first output connected to the channel arrangement, a second output, and a deflection device to direct individual drops of the absorber liquid to the first output or the second output.

Abstract: A filter system is for the local attenuation of X-radiation. In an embodiment, the filter system includes a filter device, arranged in a beam path of an X-ray apparatus and including a channel arrangement, the channel arrangement including a multiplicity of channel sections extending in parallel on a plane; a supply device to provide a 2-phase fluid flow containing drops of an absorber liquid, to absorb X-radiation and a carrier liquid transparent to X-radiation; and a sorting section, including an input connected to the supply device, a first output connected to the channel arrangement, a second output, and a deflection device to direct individual drops of the absorber liquid to the first output or the second output.

Abstract: A scattered radiation grid for an x-ray imaging is disclosed. In an embodiment, the scattered radiation grid includes alternately arranged layers permeable to x-ray radiation and absorbing x-ray radiation. The layers absorbing the x-ray radiation are formed from an amorphous material. Further, a method is disclosed for using an amorphous metal for the layers of a scattered radiation grid absorbing the x-ray radiation.

Abstract: The present disclosure relates to generating energy. The teachings thereof may be embodied in methods for burning a reaction gas with an electropositive metal. An method for generating energy may include: supplying a reaction gas and an electropositive metal separately to at least one nozzle; wherein the electropositive metal is selected from alkali metals, alkaline earth metals, aluminum, zinc, mixtures, and/or alloys thereof; burning the reaction gas with the electropositive metal; and coverting the reaction gas before or during burning at least temporarily into a plasma.

Abstract: A scattered radiation grid for an x-ray imaging is disclosed. In an embodiment, the scattered radiation grid includes alternately arranged layers permeable to x-ray radiation and absorbing x-ray radiation. The layers absorbing the x-ray radiation are formed from an amorphous material. Further, a method is disclosed for using an amorphous metal for the layers of a scattered radiation grid absorbing the x-ray radiation.

Abstract: The present disclosure relates to generating energy. The teachings thereof may be embodied in methods for burning a reaction gas with an electropositive metal. An method for generating energy may include: supplying a reaction gas and an electropositive metal separately to at least one nozzle; wherein the electropositive metal is selected from alkali metals, alkaline earth metals, aluminum, zinc, mixtures, and/or alloys thereof; burning the reaction gas with the electropositive metal; and coverting the reaction gas before or during burning at least temporarily into a plasma.

Abstract: A method and an apparatus for filtering radio-frequency electromagnetic beams, in particular x-rays, include a fluid container containing a ferrofluid which at least partially absorbs the electromagnetic beams. A distribution of the ferrofluid within the fluid container can be varied by using an applied magnetic gradient field. An irradiation apparatus and a device for irradiating an object are also provided.

Abstract: An integrated circuit includes a plurality of magnetic tunneling junction stacks, each magnetic tunneling junction stack including a reference layer, a barrier layer and a free layer, wherein the plurality of magnetic tunneling junction stacks share a continuous common reference layer.

Abstract: An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.

Abstract: An integrated circuit includes a plurality of magnetic tunneling junction stacks, each magnetic tunneling junction stack including a reference layer, a barrier layer and a free layer, wherein the plurality of magnetic tunneling junction stacks share a continuous common reference layer.

Abstract: An embodiment of the invention provides an integrated circuit having a cell. The cell includes a first magnetic layer structure having a first magnetization along a first axis, a non-magnetic spacer layer structure disposed above the first magnetic layer structure, and a second magnetic layer structure disposed above the non-magnetic spacer layer structure. The second magnetic layer structure has a second magnetization along a second axis that is arranged in an angle with regard to the first axis such that by changing the direction of the second magnetization, the direction of the first magnetization along the first axis can be determined.

Abstract: A magnetoresistive memory cell includes a tunnel barrier region between first and second electrode devices. The first electrode device includes a natural antiferromagnet region. A diffusion barrier region is formed in the first electrode device and serves as a chemical and/or physical transformation region of a surface region or interface region between the tunnel barrier region and the natural antiferromagnet region.

Abstract: The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0° and less than 90° with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0° and less than 90° with the force axis.

Abstract: A sensor has a substrate in which a mechanically deformable area is formed. A first magnetostrictive multilayer sensor element and a second magnetostrictive multilayer sensor element are formed in the mechanically deformable area, wherein the first magnetostrictive multilayer sensor element and the second magnetostrictive multilayer sensor element are connected to each other and implemented such that when generating a mechanical deformation of the mechanically deformable area, the electric resistance of the first magnetostrictive multilayer sensor element changes in an opposite way to the electric resistance of the second magnetostrictive multilayer sensor element, or the electric resistance of the first magnetostrictive multilayer sensor element remains unchanged.

Abstract: An embodiment of the invention includes an integrated circuit that has a cell. The cell includes a first magnetic layer arrangement having a magnetization which corresponds to a predefined ground state magnetization, a non-magnetic spacer layer coupled to the first layer arrangement, a second magnetic layer arrangement disposed on the opposite side of the non-magnetic spacer layer with regard to the first magnetic layer arrangement, the second magnetic layer arrangement having a magnetization fixation temperature that is lower than the magnetization fixation temperature of the first magnetic layer arrangement, and at least a portion of the second magnetic layer arrangement having a closed magnetic flux structure in its demagnetized state.

Abstract: An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.

Abstract: An MRAM memory cell is provided having a layer system made of circular-disk-shaped layers. The memory cell includes first and second magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer exhibits hard-magnetic behavior and serves as a reference layer. The second magnetic layer exhibits soft-magnetic behavior and serves as a storage layer. An antiferromagnetic layer may be provided on the storage layer. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remanent magnetization in the interior of the storage layer. The remanent magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.

Abstract: The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperature. When cooling from a temperature above the Curie temperature TC1 of the first layer in an external magnetic field, the magnetization of the second layer is oriented by a second-order phase transition along the field direction of the external magnetic field. Upon further cooling below the Curie temperature TC2 of the second layer, the latter is oriented antiparallel with respect to the first layer as a result of the antiferromagnetic coupling between the two layers.

Abstract: An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.

Abstract: A sensor has a substrate in which a mechanically deformable area is formed. A first magnetostrictive multilayer sensor element and a second magnetostrictive multilayer sensor element are formed in the mechanically deformable area, wherein the first magnetostrictive multilayer sensor element and the second magnetostrictive multilayer sensor element are connected to each other and implemented such that when generating a mechanical deformation of the mechanically deformable area, the electric resistance of the first magnetostrictive multilayer sensor element changes in an opposite way to the electric resistance of the second magnetostrictive multilayer sensor element, or the electric resistance of the first magnetostrictive multilayer sensor element remains unchanged.