Patents by Inventor Manfred SCHABES

Manfred SCHABES has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic tunnel junction devices including an optimization layer
    Patent number: 10424723
    Abstract: A Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of cell pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the cell pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the cell pillar.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: September 24, 2019
    Assignee: SPIN MEMORY, INC.
    Inventors: Thomas Boone, Pradeep Manandhar, Manfred Schabes, Bartlomiej Kardasz, Mustafa Pinarbasi
  • Methods of manufacturing magnetic tunnel junction devices
    Patent number: 10367139
    Abstract: A method of manufacturing a Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of MTJ pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the MTJ pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the MTJ pillar.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: July 30, 2019
    Assignee: Spin Memory, Inc.
    Inventors: Thomas Boone, Pradeep Manandhar, Manfred Schabes, Bartlomiej Kardasz, Mustafa Pinarbasi
  • METHODS OF MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICES
    Publication number: 20190207105
    Abstract: A method of manufacturing a Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of MTJ pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the MTJ pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the MTJ pillar.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Thomas Boone, Pradeep Manandhar, Manfred Schabes, Bartlomiej Kardasz, Mustafa Pinarbasi
  • MAGNETIC TUNNEL JUNCTION DEVICES INCLUDING AN OPTIMIZATION LAYER
    Publication number: 20190207087
    Abstract: A Magnetic Tunnel Junction (MTJ) device including pillar contacts coupling the free magnetic layer of cell pillars to a top contact. The pillar contacts are electrically isolated from one or more other portions of the cell pillar by one or more self-aligned sidewall insulators. The MTJ device further including one of a static magnetic compensation layer or an exchange spring layer in the cell pillar.
    Type: Application
    Filed: December 29, 2017
    Publication date: July 4, 2019
    Inventors: Thomas BOONE, Pradeep MANANDHAR, Manfred SCHABES, Bartlomiej KARDASZ, Mustafa PINARBASI