Patents by Inventor Manfred Schnoller

Manfred Schnoller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for dissolving a hardened glass solder, method for separating components joined by a glass solder, method for disassembling a fuel cell
    Patent number: 6016668
    Abstract: A method for dissolving a hardened glass solder, a method for separating components joined by a glass solder, a method for disassembling a fuel cell, and an apparatus for disassembling a fuel cell, include heating the hardened glass solder in a melt of a hydroxide. As a result, components which had been joined through the use of the hardened glass solder are able to be reused or subjected to a recycling process.
    Type: Grant
    Filed: May 6, 1998
    Date of Patent: January 25, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Horst Greiner, Manfred Wohlfart, Manfred Schnoller
  • Method for preparing a protective amorphous silicon passivating film on a semiconductor device
    Patent number: 4362766
    Abstract: In the present invention a process is provided for depositing a protective passivating film of doped or undoped amorphous silicon on a body of semiconductor material. In the process a body of semiconductor material is disposed within a reaction vessel, a silicon-hydrogen gaseous compound is fed into the reaction vessel and decomposed by means of a glow discharge. The decomposition of the silicon-hydrogen gas mixture results in the deposition of amorphous silicon on the semiconductor body.
    Type: Grant
    Filed: July 1, 1981
    Date of Patent: December 7, 1982
    Assignee: Siemens Aktiengesellschaft
    Inventors: Friedrich Dannhauser, Karl Kempter, Jurgen Krausse, Manfred Schnoller
  • Method of producing homogeneously doped p-conductive semiconductor materials
    Patent number: 4025365
    Abstract: A homogeneously doped p-conductive semiconductor material is produced by irradiating a desired semiconductor material with .gamma.-photons which trigger nuclear reactions within such irradiated material to form dopant atoms therein.
    Type: Grant
    Filed: August 11, 1975
    Date of Patent: May 24, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Joachim Martin, Ernst Haas, Konrad Reuschel, Manfred Schnoller