Abstract: Hydrogenation of a chlorosilane takes place in a reactor having a graphite reaction chamber with a surface which contacts the chlorosilane and a graphite electric heating element which also contacts the chlorosilane, wherein an Si-containing compound and hydrogen are contacted with the reaction chamber and the heating element such that an SiC coating is formed in situ on their surfaces in a first process step, and hydrogenation of the chlorosilane is effected by heating of a chlorosilane/hydrogen mixture in the reaction chamber by means of the heating element in a second process step, the first process step carried out at a reaction temperature which is higher than the reaction temperature of the second process step.

Abstract: Hydrogenation of a chlorosilane takes place in a reactor having a graphite reaction chamber with a surface which contacts the chlorosilane and a graphite electric heating element which also contacts the chlorosilane, wherein an Si-containing compound and hydrogen are contacted with the reaction chamber and the heating element such that an SiC coating is formed in situ on their surfaces in a first process step, and hydrogenation of the chlorosilane is effected by heating of a chlorosilane/hydrogen mixture in the reaction chamber by means of the heating element in a second process step, the first process step carried out at a reaction temperature which is higher than the reaction temperature of the second process step.