Abstract: The invention relates to non-Joulian magnetostriction (NJM) materials comprising transition metals, such as iron alloy magnets with non-Joulian magnetostriction (NJM). The invention also relates to reversibly linear non-dissipative transition metals magnets. The materials are capable of simultaneously large actuation in longitudinal and transverse directions, without simultaneous heat loss. The invention relates as well to methods of making non-Joulian magnetostriction (NJM) materials.

Abstract: A cooling system based on thermoelastic effect is provided. The system comprises a heat sink, a refrigerated space and a regenerator coupled to the refrigerated space and to the heat sink to pump heat from the refrigerated space to the heat sink. The regenerator comprises solid thermoelastic refrigerant materials capable of absorbing or releasing heat.

Abstract: The invention relates to non-Joulian magnetostriction (NJM) materials comprising transition metals, such as iron alloy magnets with non-Joulian magnetostriction (NJM). The invention also relates to reversibly linear non-dissipative transition metals magnets. The materials are capable of simultaneously large actuation in longitudinal and transverse directions, without simultaneous heat loss. The invention relates as well to methods of making non-Joulian magnetostriction (NJM) materials.

Abstract: A cooling system based on thermoelastic effect is provided. The system comprises a heat sink, a refrigerated space and a regenerator coupled to the refrigerated space and to the heat sink to pump heat from the refrigerated space to the heat sink. The regenerator comprises solid thermoelastic refrigerant materials capable of absorbing or releasing heat.

Abstract: An ultrasensitive room temperature magnetoelectric thin film magnetometer is fabricated on a cantilever beam and includes an active magnetoelectric multilayer structure having a plurality of thin films formed at a region defined on the cantilever beam. Upon application of a magnetic field, the active magnetoelectric structure generates a corresponding response of an electrical nature which is a measure of a value of the applied magnetic field. The material of the cantilever beam may be removed beneath the active magnetoelectric multilayer structure to form a freestanding modification of the magnetometer with superior sensitivity. The active magnetoelectric multilayer structure is either a bi-layer structure which includes a piezoactive (piezoelectric and/or piezoresistive) thin film deposited in contact with a magnetostrictive thin film or a tri-layer active structure (in the free-standing implementation) including a piezoactive thin film sandwiched between a pair of magnetostrictive thin films.

Abstract: A micro-dimensioned shape memory alloy composite composed of a thin film of shape memory material and a substrate film. The substrate film does not require further processing and thus the composite can be used as a switch without removing any portion of the substrate on which the SMA is deposited. It is also shown that more effective switches can be manufactured by including as a component of the composite a stress compensating film.