Patents by Inventor Manhong Zhang

Manhong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive random memory cell and memory
    Patent number: 8665631
    Abstract: The present disclosure provides a resistive random memory cell and a resistive random memory. The resistive random memory cell comprises an upper electrode, a resistive layer, an intermediate electrode, an asymmetric tunneling barrier layer, and a lower electrode. The upper electrode, the resistive layer, and the intermediate electrode constitute a resistive storage portion. The intermediate electrode, the asymmetric tunneling barrier layer, and the lower electrode constitute a selection portion. The resistive storage portion and the selection portion share the intermediate electrode. The selection portion may be disposed above or under the resistive storage portion. The asymmetric tunneling barrier layer comprises at least two materials having different barrier heights, and is configured for rectifying forward tunneling current and reverse tunneling current flowing through the resistive random memory cell.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: March 4, 2014
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Zongliang Huo, Ming Liu, Manhong Zhang, Yanhua Wang, Shibing Long
  • RESISTIVE RANDOM MEMORY CELL AND MEMORY
    Publication number: 20120281452
    Abstract: The present disclosure provides a resistive random memory cell and a resistive random memory. The resistive random memory cell comprises an upper electrode, a resistive layer, an intermediate electrode, an asymmetric tunneling barrier layer, and a lower electrode. The upper electrode, the resistive layer, and the intermediate electrode constitute a resistive storage portion. The intermediate electrode, the asymmetric tunneling barrier layer, and the lower electrode constitute a selection portion. The resistive storage portion and the selection portion share the intermediate electrode. The selection portion may be disposed above or under the resistive storage portion. The asymmetric tunneling barrier layer comprises at least two materials having different barrier heights, and is configured for rectifying forward tunneling current and reverse tunneling current flowing through the resistive random memory cell.
    Type: Application
    Filed: June 30, 2011
    Publication date: November 8, 2012
    Inventors: Zongliang Huo, Ming Liu, Manhong Zhang, Yanhua Wang, Shibing Long