Abstract: A substrate processing device includes a plasma chamber, a power voltage source, a process chamber, a grid structure, and a reflector. The power voltage source is arranged in the plasma chamber for generating plasma. The process chamber defines a processing region for processing a substrate, and arranged below the plasma chamber. The grid structure is arranged between the process chamber and the plasma chamber for receiving the plasma and supplying ions or radicals to the substrate The reflector is for forming neutrons from the ions or the radicals and supplying the neutrons to the substrate.

Abstract: A semiconductor wafer processing apparatus includes a plasma chamber, a processing chamber connected to the plasma chamber and including an electrostatic chuck configured to support a semiconductor wafer, a plurality of grid electrodes between the plasma chamber and the processing chamber, and through-holes extending through the plurality of grid electrodes, where the plurality of grid electrodes include a first grid electrode and a second grid electrode spaced apart from the first grid electrode in a direction from the plasma chamber to the processing chamber and at least one of the first grid electrode and the second grid electrode includes a plurality of electrode plates.

Abstract: The present invention relates to a roof rack assembly and a hood light-blocking fabric assembly, the hood light-blocking fabric assembly capable of photovoltaic generation comprising: a lower photovoltaic generation plate fixedly installed to cover the hood of a vehicle and configured to prevent inflow of heat energy of sunlight into the vehicle, to absorb sunlight, and to produce electricity accordingly; and an upper photovoltaic generation plate installed on an upper portion of the lower photovoltaic generation plate and configured to change between a first position at which the upper photovoltaic generation plate overlaps the upper portion of the lower photovoltaic generation plate and a second position at which the upper photovoltaic generation plate covers a front glass of the vehicle.

Abstract: Disclosed is a method of forming a chalcogenide-based thin film using an atomic layer deposition (ALD) process including forming a Ge—Te-based material, the forming of the Ge—Te-based material may include a first operation of supplying, into a reaction chamber provided with a substrate, a first source gas including a Ge precursor with Ge having an oxidation state of +2, a second operation of supplying a first purge gas into the reaction chamber, a third operation of supplying, into the reaction chamber, a second source gas including a Te precursor and a first co-reactant gas for promoting a reaction between the Ge precursor and the Te precursor, and a fourth operation of supplying a second purge gas into the reaction chamber.