Abstract: A rendered image is generated from a semiconductor device design file. The rendered image is segmented based on a grey level of the rendered image. Care areas are determined based on the segmenting. Defect inspection is performed in the care areas. This process can be performed on a wafer inspection tool that uses photon optics or electron beam optics.

Abstract: A rendered image is generated from a semiconductor device design file. The rendered image is segmented based on a grey level of the rendered image. Care areas are determined based on the segmenting. Defect inspection is performed in the care areas. This process can be performed on a wafer inspection tool that uses photon optics or electron beam optics.

Abstract: Context attributes for optical imaging of a patterned layer of a semiconductor die are calculated. Calculating the context attributes includes calculating convolutions of a pattern of the patterned layer with respective kernels of a plurality of kernels, wherein the plurality of kernels is orthogonal. Defects on the semiconductor die are found in accordance with the context attributes.

Abstract: Methods and systems for creating a sample of defects for a specimen are provided. One method includes detecting defects on a specimen based on output generated by a detector of an output acquisition subsystem. For the defects detected in an array region on the specimen, where the array region includes multiple array cell types, the method includes stacking information for the defects based on the multiple array cell types. The stacking includes overlaying design information for only a first of the multiple array cell types with the information for only the defects detected in the first of the multiple array cell types. In addition, the method includes selecting a portion of the detected defects based on results of the stacking thereby creating a sample of the detected defects.

Abstract: Methods and systems for creating a sample of defects for a specimen are provided. One method includes detecting defects on a specimen based on output generated by a detector of an output acquisition subsystem. For the defects detected in an array region on the specimen, where the array region includes multiple array cell types, the method includes stacking information for the defects based on the multiple array cell types. The stacking includes overlaying design information for only a first of the multiple array cell types with the information for only the defects detected in the first of the multiple array cell types. In addition, the method includes selecting a portion of the detected defects based on results of the stacking thereby creating a sample of the detected defects.