Patents by Inventor Manish MATHEW

Manish MATHEW has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9577148
    Abstract: An n-type GaN layer made of n-type gallium nitride (GaN) is formed on a sapphire substrate. A plurality of island-phased layered structures are formed in random sizes between the n-type GaN layer and a p-type GaN layer that is made of p-type GaN. Each of the layered structures is configured by stacking multiple AlN layers made of aluminum nitride (AlN) and multiple InGaN layers made of indium gallium nitride (InGaN) on an AlN base layer. The respective layered structures emit lights of different wavelengths. This accordingly allows for emission of light in a wider wavelength range.
    Type: Grant
    Filed: February 5, 2014
    Date of Patent: February 21, 2017
    Assignee: THE UNIVERSITY OF TOKYO
    Inventors: Masakazu Sugiyama, Manish Mathew, Yoshiaki Nakano, Hassanet Sodabanlu
  • Publication number: 20160118539
    Abstract: An n-type GaN layer made of n-type gallium nitride (GaN) is formed on a sapphire substrate. A plurality of island-phased layered structures are formed in random sizes between the n-type GaN layer and a p-type GaN layer that is made of p-type GaN. Each of the layered structures is configured by stacking multiple AlN layers made of aluminum nitride (AlN) and multiple InGaN layers made of indium gallium nitride (InGaN) on an AlN base layer. The respective layered structures emit lights of different wavelengths. This accordingly allows for emission of light in a wider wavelength range.
    Type: Application
    Filed: February 5, 2014
    Publication date: April 28, 2016
    Applicant: THE UNIVERSITY OF TOKYO
    Inventors: Masakazu SUGIYAMA, Manish MATHEW, Yoshiaki NAKANO, Hassanet SODABANLU