Abstract: Various embodiments are directed to a pressure sensor and method of using the same. A pressure sensor may comprise a substrate having a substrate thickness extending between a first substrate surface and a second substrate surface, wherein the first substrate surface and the second substrate surface define opposing ends of the substrate thickness; a first pressure sensing assembly attached to the first substrate surface and configured to detect a first pressure force associated with a first fluid volume, wherein a portion of the first substrate surface adjacent the first pressure sensing assembly is fluidly isolated from the first volume of fluid; and a second pressure sensing assembly attached to the second substrate surface and configured to detect a second pressure force associated with a second volume of fluid, wherein a portion of the second substrate surface adjacent the second pressure sensing assembly is fluidly isolated from the second fluid volume.

Abstract: The methods for synthesizing mordenite (MOR) zeolite crystals described herein utilize a combination of organics and produce MOR crystals with reduced size, higher Si/Al ratio, fewer stacking faults, less occluded organics in the final product, and a longer catalyst lifetime.

Abstract: Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

Abstract: Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

Abstract: Various embodiments are directed to a pressure sensor and method of using the same. A pressure sensor may comprise a substrate having a substrate thickness extending between a first substrate surface and a second substrate surface, wherein the first substrate surface and the second substrate surface define opposing ends of the substrate thickness; a first pressure sensing assembly attached to the first substrate surface and configured to detect a first pressure force associated with a first fluid volume, wherein a portion of the first substrate surface adjacent the first pressure sensing assembly is fluidly isolated from the first volume of fluid; and a second pressure sensing assembly attached to the second substrate surface and configured to detect a second pressure force associated with a second volume of fluid, wherein a portion of the second substrate surface adjacent the second pressure sensing assembly is fluidly isolated from the second fluid volume.

Abstract: Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

Abstract: Various embodiments are directed to a pressure sensor and method of using the same. A pressure sensor may comprise a substrate having a substrate thickness extending between a first substrate surface and a second substrate surface, wherein the first substrate surface and the second substrate surface define opposing ends of the substrate thickness; a first pressure sensing assembly attached to the first substrate surface and configured to detect a first pressure force associated with a first fluid volume, wherein a portion of the first substrate surface adjacent the first pressure sensing assembly is fluidly isolated from the first volume of fluid; and a second pressure sensing assembly attached to the second substrate surface and configured to detect a second pressure force associated with a second volume of fluid, wherein a portion of the second substrate surface adjacent the second pressure sensing assembly is fluidly isolated from the second fluid volume.

Abstract: Various embodiments are directed to a pressure sensor and method of using the same. A pressure sensor may comprise a substrate having a substrate thickness extending between a first substrate surface and a second substrate surface, wherein the first substrate surface and the second substrate surface define opposing ends of the substrate thickness; a first pressure sensing assembly attached to the first substrate surface and configured to detect a first pressure force associated with a first fluid volume, wherein a portion of the first substrate surface adjacent the first pressure sensing assembly is fluidly isolated from the first volume of fluid; and a second pressure sensing assembly attached to the second substrate surface and configured to detect a second pressure force associated with a second volume of fluid, wherein a portion of the second substrate surface adjacent the second pressure sensing assembly is fluidly isolated from the second fluid volume.

Abstract: The methods for synthesizing mordenite (MOR) zeolite crystals described herein utilize a combination of organics and produce MOR crystals with reduced size, higher Si/Al ratio, fewer stacking faults, less occluded organics in the final product, and a longer catalyst lifetime.

Abstract: Disclosed are pressure sensors including a die and an application-specific integrated circuit (ASIC) mounted on a top surface of a substrate. The pressure sensor can define an inner volume and a bottom opening configured to abut the substrate. The die and ASIC are mounted on the top surface of the substrate within the inner volume. The substrate defines a first aperture therethrough and the die defines a second aperture therethrough in a direction along an axis perpendicular to the substrate, the first aperture and the second aperture being aligned. Metallic barrier(s) disposed on a bottom surface of the substrate, circumferentially about the first aperture, can be at least partially coated with solder mask to reduce or prevent flow of unwanted materials past the metallic barriers and through the first aperture. The substrate can include electrical connection pads on the bottom surface configured to be in communication with a daughter board.

Abstract: Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/?m2 or greater.

Abstract: Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/?m2 or greater.

Abstract: Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/?m2 or greater.

Abstract: Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/?m2 or greater.