Abstract: According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region.

Abstract: According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region.

Abstract: According to one embodiment, a semiconductor device, includes a semiconductor layer, a first base region of a first conductivity type, a first source region of a second conductivity type, a second base region of the first conductivity type, a back gate region of the first conductivity type, a drift region of the second conductivity type, a drain region of the second conductivity type, a first insulating region, a second insulating region, a gate oxide film, a first gate electrode, a second gate electrode, a first main electrode and a second main electrode. These constituent elements are provided on the surface of the semiconductor layer. The distance between the first base region and the first insulating region is not more than 1.8 ?m. The distance between the first base region and the first insulating region is shorter than a distance between the second base region and the second insulating region.

Abstract: A LDD layer of the second conduction type locates in the surface of a semiconductor layer beneath a sidewall insulator film. A source layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the LDD layer. A resurf layer of the second conduction type is formed in the surface of the semiconductor layer at a position sandwiching the gate electrode with the LDD layer. A drain layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the resurf layer. The resurf layer is formed in depth to have peaks of a first and a second impurity concentration in turn from the surface of the semiconductor layer. The peak of the first impurity concentration is smaller than the peak of the second impurity concentration.

Abstract: According to one embodiment, a semiconductor device, includes a semiconductor layer, a first base region of a first conductivity type, a first source region of a second conductivity type, a second base region of the first conductivity type, a back gate region of the first conductivity type, a drift region of the second conductivity type, a drain region of the second conductivity type, a first insulating region, a second insulating region, a gate oxide film, a first gate electrode, a second gate electrode, a first main electrode and a second main electrode. These constituent elements are provided on the surface of the semiconductor layer. The distance between the first base region and the first insulating region is not more than 1.8 ?m. The distance between the first base region and the first insulating region is shorter than a distance between the second base region and the second insulating region.

Abstract: A semiconductor device is provided, which comprises a first transistor and a second transistor formed in a semiconductor layer. The first transistor includes a first source region and a first drain region sandwiching a first gate electrode with the first source region. The second transistor includes an LDD region and a drift region sandwiching the second gate electrode with the LDD region, and a second drain region adjacent to the drift region to sandwich the second gate electrode with the second source region. The first gate electrode has a first sidewall formed on sides thereof and the second gate electrode has a second sidewall formed on sides thereof. The width of the former along the first insulator differs from the width of the latter along the second insulator.

Abstract: A semiconductor device is provided, which comprises a first transistor and a second transistor formed in a semiconductor layer. The first transistor includes a first source region and a first drain region sandwiching a first gate electrode with the first source region. The second transistor includes an LDD region and a drift region sandwiching the second gate electrode with the LDD region, and a second drain region adjacent to the drift region to sandwich the second gate electrode with the second source region. The first gate electrode has a first sidewall formed on sides thereof and the second gate electrode has a second sidewall formed on sides thereof. The width of the former along the first insulator differs from the width of the latter along the second insulator.

Abstract: A LDD layer of the second conduction type locates in the surface of a semiconductor layer beneath a sidewall insulator film. A source layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the LDD layer. A resurf layer of the second conduction type is formed in the surface of the semiconductor layer at a position sandwiching the gate electrode with the LDD layer. A drain layer of the second conduction type is formed in the surface of the semiconductor layer at a position adjacent to the resurf layer. The resurf layer is formed in depth to have peaks of a first and a second impurity concentration in turn from the surface of the semiconductor layer. The peak of the first impurity concentration is smaller than the peak of the second impurity concentration.