Abstract: An electronic device using a spatio-temporal self-similarity (STSS) and a method of operating the electronic device are disclosed. The electronic device may generate an STSS tensor including a spatial self-similarity map and spatial cross-similarity maps for each position of a video feature map corresponding to an input video based on a temporal offset and a spatial offset. STSS feature vectors may be generated from the STSS tensor by decreasing a dimension of the spatial offset and maintaining a dimension of the temporal offset for each position of the STSS tensor. An STSS feature map may be generated by integrating the dimension of the temporal offset for each position of the STSS feature vectors. An inference on the input video may be based on a result of adding the STSS feature map to the video feature map.

Abstract: A vehicle side-rear warning device includes a camera which records a side-rear of a vehicle, a sensor, a monitor which displays an image recorded by the camera, and a side-rear warning system control unit. An image signal recorded by the camera and a signal sensed by the sensor are input to the side-rear warning system control unit, which determines whether an object is located at a predetermined area of the side-rear of the vehicle based on the input image signal and the input signal sensed by the sensor. When the object is located within a predetermined area of the side-rear of the vehicle, the side-rear warning system control unit outputs a warning signal. The monitor displays the image signal received from the side-rear warning system control unit.

Abstract: A nonvolatile trench memory device such as an EEPROM is made by a method which permits an extremely compact and simple configuration due to the use of precise and efficient self-alignment techniques. Oxide-capped polysilicon mesas, formed integrally with the control gates, form the word lines of the memory device, while drain metallization lines contact drain regions of the device and extend over the oxide-capped word lines to form the bit lines. The resulting device is extremely compact, since the self-aligned process permits tighter tolerances and the unique polysilicon mesa/oxide cap construction permits a more compact configuration.