Abstract: This disclosure describes a superconducting device comprising a trench and a cavity that extends through a superconducting base layer. The trench crosses the cavity. The superconducting device further comprises a first junction layer that extends from a first region of the superconducting base layer to the cavity, an insulating layer on the surface of the first junction layer, and a second junction layer that extends from a second region of the superconducting base layer to the cavity. The second junction layer overlaps with the insulating layer on the bottom of the cavity. The disclosure also describes a method for producing this disclosed superconducting device.

Abstract: The present invention relates to the manufacture of Josephson junctions. Such Josephson junctions may be suitable for use in qubits. High-quality, potentially monocrystalline, electrode and dielectric layers are formed using blanket deposition. Subsequently, the structure of one of more Josephson junctions is formed using multi-photon lithography to create openings in a resist followed by etching the electrode and dielectric layers.

Abstract: Superconducting through substrate vias (STSVs) are disclosed. The STSVs provide superconducting interconnections between opposite faces of a substrate. In an example, a method of forming STSVs includes etching openings that extend from a first side of a substrate partially through the substrate towards a second side of the substrate. The method also includes depositing a seed layer over the first side of the substrate and interior surfaces of the openings in the substrate. The method further includes forming a resist or hardmask on the first side of the substrate above the seed layer, such that the resist or hardmask comprises openings aligned with the etched openings in the substrate. The etched openings in the substrate are filled with a superconducting filler material. The substrate is thinned by removing material from the second side of the substrate until the deposited seed layer is exposed on the second side of the substrate.

Abstract: The invention relates to a method for forming flip chip bumps using electroplating. The method allows the formation of flip chip bumps in a way that is compatible with already-formed sensitive electronic components, such as Josephson junctions, which may be used in quantum processing units. The invention also relates to a product and a flip chip package in which flip chip bumps are formed with the disclosed method.

Abstract: This disclosure describes a superconducting device comprising a trench and a cavity that extends through a superconducting base layer. The trench crosses the cavity. The superconducting device further comprises a first junction layer that extends from a first region of the superconducting base layer to the cavity, an insulating layer on the surface of the first junction layer, and a second junction layer that extends from a second region of the superconducting base layer to the cavity. The second junction layer overlaps with the insulating layer on the bottom of the cavity. The disclosure also describes a method for producing this disclosed superconducting device.

Abstract: The present invention relates to the manufacture of Josephson junctions. Such Josephson junctions may be suitable for use in qubits. High-quality, potentially monocrystalline, electrode and dielectric layers are formed using blanket deposition. Subsequently, the structure of one of more Josephson junctions is formed using multi-photon lithography to create openings in a resist followed by etching the electrode and dielectric layers.