Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

Abstract: Exemplary semiconductor processing chambers may include a faceplate assembly characterized by at least one surface defining a number of voids. Each void is configured to receive an interchangeable thermal body that can be selected from multiple interchangeable thermal bodies. Exemplary semiconductor processing chambers may also include a gas box characterized by movable members. Each movable member is configured to engage a delivery port and is movable to provide flow control for a gas being delivered to the processing volume through a gas flow path. Zoned flow and/or temperature control may be provided by the faceplate assembly, the gas box, or both.

Abstract: Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.