Patents by Inventor Manjunatha Prahbu

Manjunatha Prahbu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET ESD device with Schottky diode
    Patent number: 10964687
    Abstract: A fin field effect transistor (FinFET) ESD device is disclosed. The device may include: a substrate; a silicon-controlled rectifier (SCR) over the substrate, the SCR including: a p-well region over the substrate; an n-well region laterally abutting the p-well region over the substrate; a first P+ doped region over the p-well region; a first N+ doped region over the p-well region; and a second N+ doped region over the p-well region; and a Schottky diode electrically coupled to the n-well region, wherein the Schottky diode spans the n-well region and the p-well region, and wherein the Schottky diode controls electrostatic discharge (ESD) between the second N+ doped region and the n-well region.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: March 30, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Chien-Hsin Lee, Mahadeva Iyer Natarajan, Manjunatha Prahbu
  • FINFET ESD DEVICE WITH SCHOTTKY DIODE
    Publication number: 20180226394
    Abstract: A fin field effect transistor (FinFET) ESD device is disclosed. The device may include: a substrate; a silicon-controlled rectifier (SCR) over the substrate, the SCR including: a p-well region over the substrate; an n-well region laterally abutting the p-well region over the substrate; a first P+ doped region over the p-well region; a first N+ doped region over the p-well region; and a second N+ doped region over the p-well region; and a Schottky diode electrically coupled to the n-well region, wherein the Schottky diode spans the n-well region and the p-well region, and wherein the Schottky diode controls electrostatic discharge (ESD) between the second N+ doped region and the n-well region.
    Type: Application
    Filed: February 8, 2017
    Publication date: August 9, 2018
    Inventors: Chien-Hsin Lee, Mahadeva Iyer Natarajan, Manjunatha Prahbu