Abstract: An Error correction code (ECC) decoder including an input manager configured to sequentially receive a first read data including a plurality of data units read from a plurality of sectors in a memory cell array of a nonvolatile memory device, by unit of sector, a pre-decoder configured to sequentially receive the first read data and generate a respective syndrome of each of the data units, and a main decoder configured to sequentially perform a first ECC decoding on the first read data based on the respective syndrome. The input manager includes a defective sector buffer to store a data unit having a minimum expected error count from among data units on which a first ECC decoding is failed. The main decoder performs a second ECC decoding on a defective data unit stored in the defective sector buffer and receives a second read data from a selected sector corresponding to the defective data unit.

Abstract: Disclosed is an accelerator performing an accumulation operation on a plurality of data, each being a floating point type. A method of operating the accelerator includes loading first data, finding a first exponent, which is a maximum value among exponents of the first data, generating aligned first fractions by performing a bit shift on first fractions of the first data based on the first exponent, and generating a first accumulated value by an accumulation operation on the aligned first fractions, loading second data, finding a second exponent, which is a maximum value among exponents of the second data, and generating a first aligned accumulated value by a bit shift on the first accumulated value, generating aligned second fractions by a bit shift on second fractions of the second data, and generating a second accumulated value by an accumulation operation on the aligned second fractions and the first aligned accumulated value.

Abstract: A memory controller including: a data formatter receiving first to N-th hard decision data and first to N-th soft decision data, and performing a formatting operation on the first to N-th hard decision data and the first to N-th soft decision data; and an error correction code (ECC) circuit receiving the first to N-th hard decision data and the first to N-th soft decision data from the data formatter and correcting an error on the first page by ECC decoding processing, wherein the data formatter performs the formatting operation such that the first to N-th hard decision data and the first to N-th soft decision data are provided to the ECC circuit in an order different from an order of the first to N-th hard decision data and the first to N-th soft decision data were received from the memory device.

Abstract: A memory device includes first and second memory cell arrays each including a plurality of memory cells, a page buffer circuit configured to read first soft decision data including a plurality of sub-segments from the first memory cell array, and a compression circuit configured to perform a first compression operation of generating a first compression segment including a number of position values less than or equal to a first reference number, on each of a plurality of partial segments included in one of the plurality of sub-segments and sequentially perform a plurality of compression operations, which is subsequent to the first compression operation, of generating a next compression segment including a number of position values, which are less than or equal to a reference number corresponding to each compression operation, of position values included in two or more previous compression segments in each compression operation.

Abstract: The present disclosure provides method and apparatuses for managing memory of storage system. In some embodiments, a controller of a storage system includes a memory storing a program, and a processor configured to execute the program to determine whether a type of data stored in the memory is at least one of a first data type and a second data type, store, in the memory, a header of the data stored in the memory, based on a first determination that the data stored in the memory is of the first data type, compress the data stored in the memory, based on a second determination that data stored in the memory is of the second data type, and power off the memory based on at least one of the header of the data and the compressed data having been stored in the memory.

Abstract: A method of operating a storage controller includes receiving raw data indicating a series of bits each corresponding to one of threshold voltage states, performing a first state shaping for reducing a number of first target bits of the series of bits, logical values of the first target bits being equal to a logical value of a target threshold voltage state of the threshold voltage states in a first page of plural pages, generating first indicator data that indicates the first target bits based on the first state shaping, compressing the first indicator data, and storing the compressed first indicator data.

Abstract: An Error correction code (ECC) decoder including an input manager configured to sequentially receive a first read data including a plurality of data units read from a plurality of sectors in a memory cell array of a nonvolatile memory device, by unit of sector, a pre-decoder configured to sequentially receive the first read data and generate a respective syndrome of each of the data units, and a main decoder configured to sequentially perform a first ECC decoding on the first read data based on the respective syndrome. The input manager includes a defective sector buffer to store a data unit having a minimum expected error count from among data units on which a first ECC decoding is failed. The main decoder performs a second ECC decoding on a defective data unit stored in the defective sector buffer and receives a second read data from a selected sector corresponding to the defective data unit.

Abstract: A method of operating a storage controller includes receiving raw data indicating a series of bits each corresponding to one of threshold voltage states, performing a first state shaping for reducing a number of first target bits of the series of bits, logical values of the first target bits being equal to a logical value of a target threshold voltage state of the threshold voltage states in a first page of plural pages, generating first indicator data that indicates the first target bits based on the first state shaping, compressing the first indicator data, and storing the compressed first indicator data.

Abstract: Example embodiments relate to a bad area managing method of a nonvolatile memory device. The nonvolatile memory device may include a plurality of memory blocks and each block may contain memory layers stacked on a substrate. According to example embodiments, a method includes accessing one of the memory blocks, judging whether the accessed memory block includes at least one memory layer containing a bad memory cell. If a bad memory cell is detected, the method may further include configuring the memory device to treat the at least one memory layer of the accessed memory block as a bad area.

Abstract: A memory controller comprises a host interface block comprising a compression ratio calculator configured to determine whether a compression ratio of input data exceeds a predetermined compression ratio, and a compression block configured to compress the input data as a consequence of the host compression ratio calculator determining that the compression ratio exceeds the predetermined compression ratio.

Abstract: A memory controller comprises a host interface block comprising a compression ratio calculator configured to determine whether a compression ratio of input data exceeds a predetermined compression ratio, and a compression block configured to compress the input data as a consequence of the host compression ratio calculator determining that the compression ratio exceeds the predetermined compression ratio.

Abstract: A method of storing data in a storage medium and a data storage device including the storage medium are provided. The method of storing data in accordance with exemplary embodiments of the inventive concept may include receiving data to be stored in the storage medium; determining whether the received data is user data or metadata used to manage the user data; and selectively compressing the received data according to a type of the determined data. Selectively compressed data is stored in the storage medium.

Abstract: Example embodiments relate to a bad area managing method of a nonvolatile memory device. The nonvolatile memory device may include a plurality of memory blocks and each block may contain memory layers stacked on a substrate. According to example embodiments, a method includes accessing one of the memory blocks, judging whether the accessed memory block includes at least one memory layer containing a bad memory cell. If a bad memory cell is detected, the method may further include configuring the memory device to treat the at least one memory layer of the accessed memory block as a bad area.

Abstract: A write method of a data storage device including a storage media includes receiving data to be stored in the storage media; judging whether the received data is compressed data, without externally provided additional information; and selectively compressing the received data according to the judgment result, wherein the judging whether the received data is compressed data is made based on a distribution of actual symbols included in at least part of the received data.