Abstract: A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one surface of a semiconductor substrate and a second-conduction-type region at another surface of the semiconductor substrate, and electrode formation of forming a first electrode connected to the first-conduction-type region and a second electrode connected to the second-conduction-type region. In the conductive region formation, the first-conduction-type region is formed by forming a dopant layer containing a first-conduction-type dopant over the one surface of the semiconductor substrate, and heat-treating the dopant layer, and the second-conduction-type region is formed by ion-implanting a second-conduction-type dopant into the semiconductor substrate at the another surface of the semiconductor substrate.

Abstract: A solar cell and a method for manufacturing the same are disclosed.

Abstract: Disclosed is method of manufacturing a solar cell including forming a barrier film over at least one surface of a semiconductor substrate or a semiconductor layer, forming a first conductive area on the at least one surface of the semiconductor substrate or the semiconductor layer via ion implantation of a first conductive dopant through the barrier film, and removing the barrier film.

Abstract: A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one surface of a semiconductor substrate and a second-conduction-type region at another surface of the semiconductor substrate, and electrode formation of forming a first electrode connected to the first-conduction-type region and a second electrode connected to the second-conduction-type region. In the conductive region formation, the first-conduction-type region is formed by forming a dopant layer containing a first-conduction-type dopant over the one surface of the semiconductor substrate, and heat-treating the dopant layer, and the second-conduction-type region is formed by ion-implanting a second-conduction-type dopant into the semiconductor substrate at the another surface of the semiconductor substrate.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.

Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.

Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.

Abstract: A solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type which is positioned at the substrate and has a first sheet resistance, a first heavily doped region which is positioned at the substrate and has a second sheet resistance less than the first sheet resistance, a plurality of first electrodes which are positioned on the substrate, overlap at least a portion of the first heavily doped region, and are connected to the at least a portion of the first heavily doped region, and at least one second electrode which is positioned on the substrate and is connected to the substrate.

Abstract: The present embodiment relates to a solar cell and a method for manufacturing the same. A solar cell according to an embodiment includes a substrate comprising silicon semiconductor material; an emitter region formed on a rear surface of the substrate; a back surface field region formed on the rear surface of the substrate, wherein the back surface field region comprising a first back surface field region and a second the back surface field region; a first electrode electrically connected to the emitter region; and a second electrode electrically that is connected to the first back surface field region, wherein the second electrode that is not electrically connected to the second back surface field region.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter layer of a second conductive type opposite the first conductive type, a plurality of first electrodes connected to the emitter layer, at least one first current collector connected to the plurality of first electrodes, and a second electrode connected to the substrate. The emitter layer forms a p-n junction along with the substrate. Each of the plurality of first electrodes has a multi-layered structure, and the at least one first current collector has a single-layered structure.

Abstract: Methods and systems for interfacing packet and circuit telephony operations in a distributed telecommunications network. Initially, one or more digital circuit switches can be associated with the distributed telecommunications network. Thereafter, one or more network transmission elements within the distributed telecommunications network can be connected to one or more of the digital circuit switches. One or more broadband switches can then be associated with one or more of the network transmission elements, such that the broadband switches thereof interface with network transmission elements and the digital circuit switches to coordinate combined circuit and packet signaling, routing and calling processing services among varying terminals of the distributed telecommunications network.

Abstract: Methods and systems for interfacing packet and circuit telephony operations in a distributed telecommunications network. Initially, one or more digital circuit switches can be associated with the distributed telecommunications network. Thereafter, one or more network transmission elements within the distributed telecommunications network can be connected to one or more of the digital circuit switches. One or more broadband switches can then be associated with one or more of the network transmission elements, such that the broadband switches thereof interface with network transmission elements and the digital circuit switches to coordinate combined circuit and packet signaling, routing and calling processing services among varying terminals of the distributed telecommunications network.