Patents by Inventor Manny K. Ma
Manny K. Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20020018381Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: February 14, 2002Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6335888Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: December 11, 2000Date of Patent: January 1, 2002Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6320781Abstract: The present disclosure includes a twist architecture useful for the data lines in a memory device. The architecture involves the twisting of four data lines to create four portions such that each data line occupies a different position in each of the four portions.Type: GrantFiled: April 2, 2001Date of Patent: November 20, 2001Assignee: Micron Technology, Inc.Inventors: Wen Li, Manny K. Ma
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Publication number: 20010009522Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: July 26, 2001Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6259621Abstract: The present disclosure includes a twist architecture useful for the data lines in a memory device. The architecture involves the twisting of four data lines to create four portions such that each data line occupies a different position in each of the four portions.Type: GrantFiled: July 6, 2000Date of Patent: July 10, 2001Assignee: Micron Technology, Inc.Inventors: Wen Li, Manny K. Ma
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Publication number: 20010004333Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: June 21, 2001Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20010002888Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: June 7, 2001Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Publication number: 20010002889Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: ApplicationFiled: December 11, 2000Publication date: June 7, 2001Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6226210Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 12, 2000Date of Patent: May 1, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6198676Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 11, 2000Date of Patent: March 6, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6188622Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 13, 2000Date of Patent: February 13, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6181617Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: January 14, 2000Date of Patent: January 30, 2001Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D Bruce, Eric T. Stubbs
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Patent number: 6052322Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: July 28, 1999Date of Patent: April 18, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6028799Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: February 22, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6026040Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: February 15, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 6011731Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: January 4, 2000Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 5982687Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: March 1, 1999Date of Patent: November 9, 1999Assignee: Micron Technology, Inc.Inventors: Kurt D. Beigel, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs
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Patent number: 5974577Abstract: An integrated circuit package having external pins includes a function circuit, such as an address buffer, receiving an input voltage through one of the pins. If the input voltage exceeds a maximum rated voltage, the function circuit can be damaged by voltage over-stress. To provide a definitive indication that the function circuit may have been over-stressed, a diode and a fuse are connected in series between the function circuit's pin and ground. When the input voltage nears the maximum rated voltage, the diode biases and applies a voltage to the fuise. The fuse is selected so that when the input voltage exceeds the maximum rated voltage, the applied voltage blows the fuse. At a later time, the function circuit can be tested for over-stress by applying a voltage to the function circuit's pin which is sufficient to forward bias the diode. If no current flows after a sufficient biasing voltage is applied to the pin, it is a definitive indication that the function circuit may have been over-stressed.Type: GrantFiled: October 14, 1997Date of Patent: October 26, 1999Assignee: Micron Technology, Inc.Inventor: Manny K. Ma
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Patent number: 5877993Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.Type: GrantFiled: May 13, 1997Date of Patent: March 2, 1999Assignee: Micron Technology, Inc.Inventors: Kurt D. Biegel, Douglas J. Cutter, Manny K. Ma, Gordon D. Roberts, James E. Miller, Daryl L. Habersetzer, Jeffrey D. Bruce, Eric T. Stubbs