Abstract: A coreless package substrate with dual side solder resist layers is disclosed. The coreless package substrate has a top side and a bottom side opposite of the top side and includes a single build-up structure formed of at least one insulating layer, at least one via, and at least one conductive layer. The coreless package substrate also includes a bottom plurality of contact pads on the bottom side, and a top plurality of contact pads on the top side. A bottom solder resist layer is on the bottom side, and a top solder resist layer is on the top side. The concept of dual side solder resist is extended to packages with interconnect bridge with C4 interconnection pitch over a wide range.

Abstract: A coreless package substrate with dual side solder resist layers is disclosed. The coreless package substrate has a top side and a bottom side opposite of the top side and includes a single build-up structure formed of at least one insulating layer, at least one via, and at least one conductive layer. The coreless package substrate also includes a bottom plurality of contact pads on the bottom side, and a top plurality of contact pads on the top side. A bottom solder resist layer is on the bottom side, and a top solder resist layer is on the top side. The concept of dual side solder resist is extended to packages with interconnect bridge with C4 interconnection pitch over a wide range.

Abstract: A coreless package substrate with dual side solder resist layers is disclosed. The coreless package substrate has a top side and a bottom side opposite of the top side and includes a single build-up structure formed of at least one insulating layer, at least one via, and at least one conductive layer. The coreless package substrate also includes a bottom plurality of contact pads on the bottom side, and a top plurality of contact pads on the top side. A bottom solder resist layer is on the bottom side, and a top solder resist layer is on the top side. The concept of dual side solder resist is extended to packages with interconnect bridge with C4 interconnection pitch over a wide range.

Abstract: An integrated circuit (IC) package stack with a first and second substrate interconnected by solder further includes solder resist openings (SRO) of mixed lateral dimension are spatially varied across an area of the substrates. In embodiments, SRO dimension is varied between at least two different diameters as a function of an estimated gap between the substrates that is dependent on location within the substrate area. In embodiments where deflection in at least one substrate reduces conformality between the substrates, a varying solder joint height is provided from a fixed volume of solder by reducing the lateral dimensioning of the SRO in regions of larger gap relative to SRO dimensions in regions of smaller gap. In embodiments, the first substrate may be any of an IC chip, package substrate, or interposer while the second substrate may be any of another IC chip, package substrate, interposer, or printed circuit board (PCB).

Abstract: A coreless package substrate with dual side solder resist layers is disclosed. The coreless package substrate has a top side and a bottom side opposite of the top side and includes a single build-up structure formed of at least one insulating layer, at least one via, and at least one conductive layer. The coreless package substrate also includes a bottom plurality of contact pads on the bottom side, and a top plurality of contact pads on the top side. A bottom solder resist layer is on the bottom side, and a top solder resist layer is on the top side. The concept of dual side solder resist is extended to packages with interconnect bridge with C4 interconnection pitch over a wide range.

Abstract: An integrated circuit (IC) package stack with a first and second substrate interconnected by solder further includes solder resist openings (SRO) of mixed lateral dimension are spatially varied across an area of the substrates. In embodiments, SRO dimension is varied between at least two different diameters as a function of an estimated gap between the substrates that is dependent on location within the substrate area. In embodiments where deflection in at least one substrate reduces conformality between the substrates, a varying solder joint height is provided from a fixed volume of solder by reducing the lateral dimensioning of the SRO in regions of larger gap relative to SRO dimensions in regions of smaller gap. In embodiments, the first substrate may be any of an IC chip, package substrate, or interposer while the second substrate may be any of another IC chip, package substrate, interposer, or printed circuit board (PCB).

Abstract: An integrated circuit (IC) package stack with a first and second substrate interconnected by solder further includes solder resist openings (SRO) of mixed lateral dimension are spatially varied across an area of the substrates. In embodiments, SRO dimension is varied between at least two different diameters as a function of an estimated gap between the substrates that is dependent on location within the substrate area. In embodiments where deflection in at least one substrate reduces conformality between the substrates, a varying solder joint height is provided from a fixed volume of solder by reducing the lateral dimensioning of the SRO in regions of larger gap relative to SRO dimensions in regions of smaller gap. In embodiments, the first substrate may be any of an IC chip, package substrate, or interposer while the second substrate may be any of another IC chip, package substrate, interposer, or printed circuit board (PCB).

Abstract: The subject matter of the present application relates to a heat dissipation device that is embedded within a microelectronic die. The heat dissipation device may be fabricated by forming at least one trench extending into the microelectronic die from a microelectronic die back surface, which opposes an active surface thereof, and filling the trenches with at least one layer of thermally conductive material. In one embodiment, the heat dissipation device may be a thermoelectric cooling device.

Abstract: The subject matter of the present application relates to a heat dissipation device that is embedded within a microelectronic die. The heat dissipation device may be fabricated by forming at least one trench extending into the microelectronic die from a microelectronic die back surface, which opposes an active surface thereof, and filling the trenches with at least one layer of thermally conductive material. In one embodiment, the heat dissipation device may be a thermoelectric cooling device.