Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing systems (CMP) systems and processes used in the manufacturing of electronic devices. In particular, embodiments herein relate to methods of detecting non-conforming substrate processing events during a polishing process. In one embodiment, a method of processing a substrate on a polishing system includes urging a surface of a silicon carbide substrate against a polishing pad in the presence of a polishing fluid, determining a temperature of the polishing pad using a temperature sensor that is positioned above the platen, monitoring the temperature of the polishing pad, and, if the change in polishing pad temperature reaches a threshold value, initiating a response using a controller of the polishing system.

Abstract: A system and method for sequential single-sided CMP processing of opposite facing surfaces of a silicon carbide (SiC) substrate are disclosed. A method includes urging a first surface of a substrate against one of plurality of polishing pads, wherein the plurality of polishing pads are disposed on corresponding ones of a plurality of rotatable polishing platens. The method includes transferring, using the first side of the end effector, the substrate from the substrate carrier loading station to a substrate alignment station. The method includes transferring, using the first side of the end effector, the substrate from the substrate alignment station to a substrate carrier loading station. The method includes urging a second surface of the substrate against one of the plurality of polishing platens.

Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing systems (CMP) systems and processes used in the manufacturing of electronic devices. In particular, embodiments herein relate to methods of detecting non-conforming substrate processing events during a polishing process. In one embodiment, a method of processing a substrate on a polishing system includes urging a surface of a silicon carbide substrate against a polishing pad in the presence of a polishing fluid, determining a temperature of the polishing pad using a temperature sensor that is positioned above the platen, monitoring the temperature of the polishing pad, and, if the change in polishing pad temperature reaches a threshold value, initiating a response using a controller of the polishing system.