Patents by Inventor Manoj Narayanan
Manoj Narayanan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11941696Abstract: Aspects of the disclosure relate to enhanced tracking of processed events. A computing platform may receive event processing identifiers corresponding to a particular event. Using the event processing identifiers, the computing platform may generate event linkage information corresponding to the particular event, and may store the event processing identifiers along with the event linkage information. The computing platform may receive a request to access event lifecycle information corresponding to the particular event. Using the event linkage information, the computing platform may identify a plurality of event processing systems performed actions associated with the particular event. The computing platform may request and receive, from each of the plurality of event processing systems, system-specific event lifecycle information corresponding to the particular event.Type: GrantFiled: December 6, 2022Date of Patent: March 26, 2024Assignee: Bank of America CorporationInventor: Manoj Narayanan
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Publication number: 20230102595Abstract: Aspects of the disclosure relate to enhanced tracking of processed events. A computing platform may receive event processing identifiers corresponding to a particular event. Using the event processing identifiers, the computing platform may generate event linkage information corresponding to the particular event, and may store the event processing identifiers along with the event linkage information. The computing platform may receive a request to access event lifecycle information corresponding to the particular event. Using the event linkage information, the computing platform may identify a plurality of event processing systems performed actions associated with the particular event. The computing platform may request and receive, from each of the plurality of event processing systems, system-specific event lifecycle information corresponding to the particular event.Type: ApplicationFiled: December 6, 2022Publication date: March 30, 2023Inventor: Manoj Narayanan
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Patent number: 11556986Abstract: Aspects of the disclosure relate to enhanced tracking of processed events. A computing platform may receive event processing identifiers corresponding to a particular event. Using the event processing identifiers, the computing platform may generate event linkage information corresponding to the particular event, and may store the event processing identifiers along with the event linkage information. The computing platform may receive a request to access event lifecycle information corresponding to the particular event. Using the event linkage information, the computing platform may identify a plurality of event processing systems performed actions associated with the particular event. The computing platform may request and receive, from each of the plurality of event processing systems, system-specific event lifecycle information corresponding to the particular event.Type: GrantFiled: October 13, 2020Date of Patent: January 17, 2023Assignee: Bank of America CorporationInventor: Manoj Narayanan
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Publication number: 20220114665Abstract: Aspects of the disclosure relate to enhanced tracking of processed events. A computing platform may receive event processing identifiers corresponding to a particular event. Using the event processing identifiers, the computing platform may generate event linkage information corresponding to the particular event, and may store the event processing identifiers along with the event linkage information. The computing platform may receive a request to access event lifecycle information corresponding to the particular event. Using the event linkage information, the computing platform may identify a plurality of event processing systems performed actions associated with the particular event. The computing platform may request and receive, from each of the plurality of event processing systems, system-specific event lifecycle information corresponding to the particular event.Type: ApplicationFiled: October 13, 2020Publication date: April 14, 2022Inventor: Manoj Narayanan
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Patent number: 11009615Abstract: A time of flight (TOF) positron emission tomography (PET) image (38) is generated from TOF PET imaging data (10) acquired of a subject using a TOF PET imaging data acquisition device (6). Iterative image reconstruction (30) of the TOF PET imaging data is performed with TOF localization of counts along respective lines of response (LORs) to iteratively update a reconstructed image (32). Values for at least one regularization or filtering parameter are assigned to the TOF PET imaging data or to voxels of the reconstructed image based on an estimated TOF localization resolution for the TOF PET imaging data or voxels. Regularization (34) or filtering (36) of the reconstructed image is performed using the assigned values for the at least one regularization or filtering parameter. In some embodiments, the varying TOF localization resolution for the TOF PET imaging data or voxels is estimated based on related acquisition characteristics such as count rates or operating temperature of the detectors.Type: GrantFiled: December 18, 2017Date of Patent: May 18, 2021Assignee: KONINKLIJKE PHILIPS N.V.Inventors: Chuanyong Bai, Andriy Andreyev, Andre Frank Salomon, Andreas Goedicke, Jinghan Ye, Yu-Lung Hsieh, Bin Zhang, Xiyun Song, Manoj Narayanan, Zhiqiang Hu
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Outside-FOV activity estimation using surview and prior patient data in positron emission tomography
Patent number: 10925554Abstract: A radioemission scanner (12) is operated to acquire tomographic radioemission data of a radiopharmaceutical in a subject in an imaging field of view (FOV). An imaging system is operated to acquire extension imaging data of the subject in an extended FOV disposed outside of and adjacent the imaging FOV along an axial direction (18). A distribution of the radiopharmaceutical in the subject in the extended FOV is estimated based on the extension imaging data, and further based on a database (32) of reference subjects. The tomographic radioemission data are reconstructed to generate a reconstructed image (26) of the subject in the imaging FOV. The reconstruction includes correcting the reconstructed image for scatter from the extended FOV into the imaging FOV based on the estimated distribution of the radiopharmaceutical in the subject in the extended FOV.Type: GrantFiled: December 3, 2015Date of Patent: February 23, 2021Assignee: KONINKLIJKE PHILIPS N.V.Inventors: Andriy Andreyev, Manoj Narayanan, Bin Zhang, Zhiqiang Hu, Yu-Lung Hsieh, Xiyun Song, Jinghan Ye -
Publication number: 20190339403Abstract: A time of flight (TOF) positron emission tomography (PET) image (38) is generated from TOF PET imaging data (10) acquired of a subject using a TOF PET imaging data acquisition device (6). Iterative image reconstruction (30) of the TOF PET imaging data is performed with TOF localization of counts along respective lines of response (LORs) to iteratively update a reconstructed image (32). Values for at least one regularization or filtering parameter are assigned to the TOF PET imaging data or to voxels of the reconstructed image based on an estimated TOF localization resolution for the TOF PET imaging data or voxels. Regularization (34) or filtering (36) of the reconstructed image is performed using the assigned values for the at least one regularization or filtering parameter. In some embodiments, the varying TOF localization resolution for the TOF PET imaging data or voxels is estimated based on related N acquisition characteristics such as count rates or operating temperature of the detectors.Type: ApplicationFiled: December 18, 2017Publication date: November 7, 2019Inventors: Chuanyong BAI, Andriy ANDREYEV, Andre Frank SALOMON, Andreas GOEDICKE, Jinghan YE, Yu-Lung HSIEH, Bin ZHANG, Xiyun SONG, Manoj NARAYANAN, Zhiqiang HU
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Patent number: 9834843Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.Type: GrantFiled: May 26, 2016Date of Patent: December 5, 2017Assignee: UCHICAGO ARGONNE, LLCInventors: Beihai Ma, Manoj Narayanan, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu
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OUTSIDE-FOV ACTIVITY ESTIMATION USING SURVIEW AND PRIOR PATIENT DATA IN POSITRON EMISSION TOMOGRAPHY
Publication number: 20170319154Abstract: A radioemission scanner (12) is operated to acquire tomographic radioemission data of a radiopharmaceutical in a subject in an imaging field of view (FOV). An imaging system is operated to acquire extension imaging data of the subject in an extended FOV disposed outside of and adjacent the imaging FOV along an axial direction (18). A distribution of the radiopharmaceutical in the subject in the extended FOV is estimated based on the extension imaging data, and further based on a database (32) of reference subjects. The tomographic radioemission data are reconstructed to generate a reconstructed image (26) of the subject in the imaging FOV. The reconstruction includes correcting the reconstructed image for scatter from the extended FOV into the imaging FOV based on the estimated distribution of the radiopharmaceutical in the subject in the extended FOV.Type: ApplicationFiled: December 3, 2015Publication date: November 9, 2017Inventors: Andriy ANDREYEV, Manoj NARAYANAN, Bin ZHANG, Zhiqiang HU, Yu-Lung HSIEH, Xiyun SONG, Jinghan YE -
Patent number: 9679705Abstract: The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.Type: GrantFiled: February 25, 2015Date of Patent: June 13, 2017Assignee: UCHICAGO ARGONNE, LLCInventors: Beihai Ma, Manoj Narayanan, Stephen E. Dorris, Uthamalingam Balachandran
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Publication number: 20160376708Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.Type: ApplicationFiled: May 26, 2016Publication date: December 29, 2016Applicant: UCHICAGO ARGONNE, LLCInventors: Beihai Ma, Manoj Narayanan, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu
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Patent number: 9474501Abstract: A medical system (28) for normalization correction of an imaging system (10) includes a detector geometry correction unit (44), a crystal efficiency unit (46), and a normalization unit (54). The detector geometry correction unit (44) mathematically calculates a detector geometry correction component for a type of scanner (12) of interest. The crystal efficiency unit (46) configured to empirically determine a crystal efficiency component for at least one individual scanner (12). The normalization unit (54) generates a normalization data set (56) which corresponds to a normalization correction factor of the at least one individual scanner (12) in accordance with the detector geometry correction component and the crystal efficiency component.Type: GrantFiled: August 7, 2014Date of Patent: October 25, 2016Assignee: KONINKLIJKE PHILIPS N.V.Inventors: Amy Perkins, Manoj Narayanan, Andreia Maria Araujo Trindade Rodrigues, Pedro Jorge Da Silva Rodrigues
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Publication number: 20160278215Abstract: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.Type: ApplicationFiled: May 25, 2016Publication date: September 22, 2016Applicant: UCHICAGO ARGONNE, LLCInventors: Uthamalingam Balachandran, Manoj Narayanan, Beihai Ma, Stephen Dorris
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Publication number: 20160192896Abstract: A medical system (28) for normalization correction of an imaging system (10) includes a detector geometry correction unit (44), a crystal efficiency unit (46), and a normalization unit (54). The detector geometry correction unit (44) mathematically calculates a detector geometry correction component for a type of scanner (12) of interest. The crystal efficiency unit (46) configured to empirically determine a crystal efficiency component for at least one individual scanner (12). The normalization unit (54) generates a normalization data set (56) which corresponds to a normalization correction factor of the at least one individual scanner (12) in accordance with the detector geometry correction component and the crystal efficiency component.Type: ApplicationFiled: August 7, 2014Publication date: July 7, 2016Inventors: Amy PERKINS, Manoj NARAYANAN, Andreia Maria Araujo TRINDADE RODRIGUES, Pedro Jorge DA SILVA RODRIGUES
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Patent number: 9359223Abstract: The invention provides for A method for producing pure phase strontium ruthenium oxide films, the method comprising solubilizing ruthenium-containing and strontium-containing compounds to create a mixture; subjecting the mixture to a first temperature above that necessary for forming RuO2 while simultaneously preventing formation of RuO2; maintaining the first temperature for a time to remove organic compounds from the mixture, thereby forming a substantially dry film; and subjecting the film to a second temperature for time sufficient to crystallize the film. Also provided is pure phase material comprising strontium ruthenium oxide wherein the material contains no RuO2.Type: GrantFiled: September 20, 2011Date of Patent: June 7, 2016Assignee: UCHICAGO ARGONNE, LLCInventors: Manoj Narayanan, Beihai Ma, Uthamalingam Balachandran, Stephen Dorris
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Patent number: 9355761Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.Type: GrantFiled: January 2, 2014Date of Patent: May 31, 2016Assignee: UCHICAGO ARGONNE, LLCInventors: Beihai Ma, Manoj Narayanan, Uthamalingam Balachandran, Sheng Chao, Shanshan Liu
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Patent number: 9179885Abstract: When estimating an arterial input function or a patient under study, cross-calibration factors are generated by comparing nuclear scan data of a radioactive material (e.g., F18) and measuring a sample of the radioactive material in a gamma counter. The derived cross-calibration factors are applied to venous samples collected from the patient during a nuclear scan after infusion with a radioactive tracer, to convert gamma values counted by the gamma counter into concentration values. The concentration values are used to optimize an initial estimated input function, thereby generating an arterialized input function.Type: GrantFiled: December 14, 2011Date of Patent: November 10, 2015Assignee: Koninklijke Philips N.V.Inventors: Jens-Christoph Georgi, Manoj Narayanan
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Publication number: 20150170845Abstract: The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.Type: ApplicationFiled: February 25, 2015Publication date: June 18, 2015Applicant: UCHICAGO ARGONNE, LLCInventors: Beihai MA, Manoj NARAYANAN, Stephen E. DORRIS, Uthamalingam BALACHANDRAN
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Patent number: 8974856Abstract: The present invention provides a method for fabricating a ceramic film on a copper foil. The method comprises applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas. In some embodiments an additional layer of the sol-gel composition is applied onto the ceramic film and the drying, pyrolyzing and crystallizing steps are repeated for the additional layer to build up a thicker ceramic layer on the copper foil. The process can be repeated one or more times if desired.Type: GrantFiled: May 25, 2010Date of Patent: March 10, 2015Assignee: UChicago Argonne, LLCInventors: Beihai Ma, Manoj Narayanan, Stephen E. Dorris, Uthamalingam Balachandran
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Publication number: 20140120736Abstract: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 ?m to about 1.0 ?m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 ?m to about 20.0 ?m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 ?m to about 20.0 ?m.Type: ApplicationFiled: January 2, 2014Publication date: May 1, 2014Inventors: Beihai Ma, Manoj Narayanan, Uthamalingam Balachandran, Sheng Chao, Shanshan Lie