Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process on a semiconductor structures having an n-type metal oxide semiconductor (n-MOS) region and/or a p-type MOS (p-MOS) region, the cavity shaping process comprising forming an n-MOS cavity in an exposed surface of the n-MOS region and/or a p-MOS cavity in an exposed surface of the p-MOS region, wherein the cavity shaping process is configured to increase the surface area of the exposed surface of the n-MOS region or the p-MOS region. In some embodiments, the method includes performing a first selective deposition process to form a p-MOS cavity contact, selectively in the p-MOS cavity.

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises non-selectively depositing an amorphous silicon layer on a top surface and a sidewall surface of at least one contact trench on a substrate and a crystalline silicon layer on a bottom surface of the at least one contact trench at a temperature less than or equal to 400° C., the bottom surface including a source/drain material. The amorphous silicon layer is selectively removed from the top surface and the sidewall surface at a temperature less than or equal to 400° C. The method may be performed in a processing chamber without breaking vacuum.

Abstract: Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

Abstract: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.

Abstract: Embodiments of the invention relate to methods for fabricating a passivation layer stack for photovoltaic devices. In one embodiment, the passivation layer stack comprises a first dielectric layer of AlxOy (or SiOx) and a second dielectric layer of SixNy having a refractive index less than 2.1. The passivation layer stack has contact openings formed therethrough by a series of pulsed laser beams having a wavelength of about 300-700 nm and a pulse width of about 0.01 nanosecond to about 3 nanoseconds. Lowering the refractive index of SixNy capping AlxOy (or SiOx) in the passivation layer stack makes pulsed laser beams less selective since the SixNy absorbs less laser energy. Therefore, desired regions of the entire passivation layer stack can be removed smoothly in a single pass of pulsed laser beams at a shorter wavelength without causing damage to the neighborhood of the passivation layer stack.

Abstract: Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.

Abstract: Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.

Abstract: Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include implanting a dopant species into the one or more regions of the substrate using a first dopant precursor comprising a hydride of the dopant species; and implanting the dopant species into the one or more regions of the substrate using a second dopant precursor comprising fluorine and the dopant species. In some embodiments, the first and second dopant precursors may be provided simultaneously. In some embodiments, the first dopant precursor may be provided for a first time period, followed by providing the first dopant precursor and the second dopant precursor for a second period of time. In some embodiments, the flow of the first dopant precursor and the flow of the second dopant precursor may be alternated until a desired implant level is reached.

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, flowing a gas mixture including a hydride dopant gas and a fluorine-containing dopant gas into the processing chamber, wherein the hydride dopant gas comprises P-type hydride dopant gas, N-type hydride dopant gas, or a combination thereof, and the fluorine-containing dopant gas comprises a P-type or N-type dopant atom, generating a plasma from the gas mixture, and co-implanting ions from the gas mixture into a surface of the substrate.

Abstract: The invention generally relates to pre-implant and post-implant treatments to promote the retention of dopants near the surface of an implanted substrate. The pre-implant treatments include forming a plasma from an inert gas and implanting the inert gas into the substrate to render an upper portion of the substrate amorphous. The post-implant treatment includes forming a passivation layer on the upper surface of the substrate after doping the substrate in order to retain the dopant during a subsequent activation anneal.