Patents by Inventor Manon Plante

Manon Plante has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4857480
    Abstract: A method of depositing P-type material on one or more semiconductor substrate wafers in a MOSFET fabrication process, utilizing boron disks. The boron disks are passivated by exposing them to nitrogen gas within a reaction chamber, and then subsequently oxidized by flowing gaseous oxygen thereover. P-type material is diffused from the boron disks onto the surface of the wafers by flowing nitrogen gas over the disks and wafers within the reaction chamber, and subsequently flowing a mixture of nitrogen and oxygen gas over the disks and wafers at a predetermined temperature and flow rate, and for a predetermined length of time. The wafers produced according to the method of the present invention are characterized by high yield, few surface or near-surface defects, and uniform P+ sheet resistance. The method is substantially less expensive to implement than prior art ion implantation techniques for fabricating MOS devices.
    Type: Grant
    Filed: October 26, 1987
    Date of Patent: August 15, 1989
    Assignee: Mitel Corporation
    Inventor: Manon Plante