Abstract: The invention relates to porous dielectric layers obtained from pore-forming precursors and from matrix precursors. According to the invention, the pore-forming precursors used are chosen form molecules of myrtenol, ethyl chrysanthemumate, jasmine, trimethylbenzene, their positional isomers and their substituted or hydrogenated derivatives. The dielectric constant of the layer obtained is less than or equal to 2.5, starting from matrix precursors having a dielectric constant of less than or equal to 4.

Abstract: The invention relates to porous dielectric layers obtained from pore-forming precursors and from matrix precursors. According to the invention, the pore-forming precursors used are chosen form molecules of myrtenol, ethyl chrysanthemumate, jasmine, trimethylbenzene, their positional isomers and their substituted or hydrogenated derivatives. The dielectric constant of the layer obtained is less than or equal to 2.5, starting from matrix precursors having a dielectric constant of less than or equal to 4.

Abstract: Method of forming a low dielectric k porous film on a substrate, comprising reacting at least a film matrix precursor compound having silicon, carbon, oxygen and hydrogen atoms, and either at least a pore-forming compound, of the formula (I) wherein R represents: either a linear or branched, saturated or non saturated hydrocarbon radical, or a cyclic saturated or unsaturated hydrocarbon radical, or at least one of the following pore-forming compounds: 1-methyl-4-(1-methyl ethyl)-7-oxabicyclo[2.2.1.]heptane, 1,3,3-trimethyl-2-oxabicyclo[2.2.1.]octane or 1,8-cineole, or 1-methyl-4-(1-methyl ethenyl)-7-oxabicyclo[4.1.0.]heptane; New precursor precursor mixture, and the use of a compound of formula (I), as a pore-forming compound in a chemical vapor deposition of a low dielectric k film on a substrate.