Patents by Inventor Manoocher Mansouri Aliabadi
Manoocher Mansouri Aliabadi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9214588Abstract: The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate.Type: GrantFiled: February 11, 2014Date of Patent: December 15, 2015Assignee: OSI Optoelectronics, Inc.Inventors: Peter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri Aliabadi
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Publication number: 20140319642Abstract: The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate.Type: ApplicationFiled: February 11, 2014Publication date: October 30, 2014Applicant: OSI OptoelectronicsInventors: Peter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri Aliabadi
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Patent number: 8686529Abstract: The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate.Type: GrantFiled: January 19, 2010Date of Patent: April 1, 2014Assignee: OSI Optoelectronics, Inc.Inventors: Peter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri Aliabadi
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Publication number: 20120061788Abstract: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.Type: ApplicationFiled: September 2, 2011Publication date: March 15, 2012Inventors: Peter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri Aliabadi
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Patent number: 8085898Abstract: The present invention relates to a dual energy X-ray apparatus and method for osteoporosis assessment and monitoring. The present invention takes a bone densitometry reading of a patient's wrist to assess osteoporosis and monitor bone loss condition by repeat measurements along with therapy. The bone densitometry system has an X-ray source, dual energy detectors, an arm-rest to place the patient's arm, a motion system to move the source-detector gantry along the patient's forearm, and a computer with a database to archive the wrist image, calculate the bone mineral density, maintain a history of patient information, and generate patient history reports.Type: GrantFiled: May 8, 2009Date of Patent: December 27, 2011Assignee: Osteometer Meditech, Inc.Inventors: Neeraj Agrawal, Manoocher Mansouri Aliabadi, Christian Wulff, Kahn-Tze Andrew Lim
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Patent number: 8035183Abstract: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.Type: GrantFiled: March 12, 2010Date of Patent: October 11, 2011Assignee: UDT Sensors, Inc.Inventors: Peter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri Aliabadi
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Publication number: 20110175188Abstract: The present invention is directed toward a dual junction photodiode semiconductor devices with improved wavelength sensitivity. The photodiode employs a high quality n-type layer with relatively lower doping concentration and enables high minority carrier lifetime and high quantum efficiency with improved responsivity at multiple wavelengths. In one embodiment, the photodiode comprises a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type formed epitaxially in the semiconductor substrate, a second impurity region of the first conductivity type shallowly formed in the epitaxially formed first impurity region, a first PN junction formed between the epitaxially formed first impurity region and the second impurity region, a second PN junction formed between the semiconductor substrate and the epitaxially formed first impurity region, and at least one passivated V-groove etched into the epitaxially formed first impurity region and the semiconductor substrate.Type: ApplicationFiled: January 19, 2010Publication date: July 21, 2011Inventors: Peter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri Aliabadi
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Publication number: 20100284515Abstract: The present invention relates to a dual energy X-ray apparatus and method for osteoporosis assessment and monitoring. The present invention takes a bone densitometry reading of a patient's wrist to assess osteoporosis and monitor bone loss condition by repeat measurements along with therapy. The bone densitometry system has an X-ray source, dual energy detectors, an arm-rest to place the patient's arm, a motion system to move the source-detector gantry along the patient's forearm, and a computer with a database to archive the wrist image, calculate the bone mineral density, maintain a history of patient information, and generate patient history reports.Type: ApplicationFiled: May 8, 2009Publication date: November 11, 2010Inventors: Neeraj Agrawal, Manoocher Mansouri Aliabadi, Christian Wulff, Kahn-Tze Andrew Lim
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Publication number: 20100264505Abstract: The present invention is directed toward a dual junction photodiode semiconductor device. The photodiode has a semiconductor substrate of a first conductivity type, a first impurity region of a second conductivity type shallowly diffused on the front side of the semiconductor substrate, a second impurity region of the second conductivity type shallowly diffused on the back side of the semiconductor substrate, a first PN junction formed between the first impurity region and the semiconductor substrate, and a second PN junction formed between the second impurity region and the semiconductor substrate. Since light beams of a shorter wavelength are absorbed near the surface of a semiconductor, while light beams of a longer wavelength reach deeper sections, the two PN junctions at front and back sides of the photodiode allow the device to be used as an adjustable low pass or high pass wavelength filter detector.Type: ApplicationFiled: March 12, 2010Publication date: October 21, 2010Inventors: Peter Steven Bui, Narayan Dass Taneja, Manoocher Mansouri Aliabadi
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Publication number: 20100135458Abstract: The present invention relates to a dual energy X-ray apparatus and method for osteoporosis assessment and monitoring. The present invention takes a bone densitometry reading of a patient's wrist to assess osteoporosis and monitor bone loss condition by repeat measurements along with therapy. The bone densitometry system has an X-ray source, dual energy detectors, an arm-rest to place the patient's arm, a motion system to move the source-detector gantry along the patient's forearm, and a computer with a database to archive the wrist image, calculate the bone mineral density, maintain a history of patient information, and generate patient history reports.Type: ApplicationFiled: November 19, 2009Publication date: June 3, 2010Inventors: Neeraj Agrawal, Manoocher Mansouri Aliabadi, Christian Wulff, Kahn-Tze Andrew Lim