Patents by Inventor Manshik Park

Manshik Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon based fusion composition and manufacturing method of silicon carbide single crystal using the same
    Patent number: 11203818
    Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: December 21, 2021
    Inventors: Ho Rim Lee, Chan Yeup Chung, Manshik Park, Jung Min Ko
  • Silicon-based molten composition and method for manufacturing silicon carbide single crystal using the same
    Patent number: 11193217
    Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: December 7, 2021
    Inventors: Junghwan Kim, Ho Rim Lee, Chan Yeup Chung, Jung Min Ko, Manshik Park
  • Silicon-Based Molten Composition and Method for Manufacturing Silicon Carbide Single Crystal Using the Same
    Publication number: 20200080226
    Abstract: A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al). SiaCrbVcAld ??[Formula 1] In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.
    Type: Application
    Filed: November 1, 2018
    Publication date: March 12, 2020
    Applicant: LG Chem, Ltd.
    Inventors: Junghwan Kim, Ho Rim Lee, Chan Yeup Chung, Jung Min Ko, Manshik Park
  • Silicon Based Fusion Composition and Manufacturing Method of Silicon Carbide Single Crystal Using the Same
    Publication number: 20200010973
    Abstract: The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al): SiaM1bSccAld??(Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.
    Type: Application
    Filed: May 30, 2018
    Publication date: January 9, 2020
    Applicant: LG Chem, Ltd.
    Inventors: Ho Rim Lee, Chan Yeup Chung, Manshik Park, Jung Min Ko