Abstract: The disclosed and claimed subject matter relates to thermal atomic layer etch (ALE) processing of metals and alloys thereof (e.g., cobalt and cobalt alloys) using thionyl chloride (SOCl2) or a combination of thionyl chloride and pyridine.

Abstract: A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.

Abstract: A method is disclosed for the preparation of a silicon nitrogeneous film. Polysilazane film is exposed to an electron beam irradiation and subsequently to at least one process selected from the group consisting of a vacuum ultra-violet light irradiation and a plasma processing. The treated film is heated under a non-oxidizing atmosphere to manufacture a silicon nitrogeneous film. The silicon nitrogeneous film is able to be formed at low process temperature. Further, the silicon nitrogeneous film has a high refractive index and low oxygen content.

Abstract: The disclosed and claimed subject matter relates to thermal ALE processing of metal oxide films using one or more fluorinating agent and one or more chlorinating agent.

Abstract: Described are low resistivity metal layers/films, such as low resistivity ruthenium (Ru) layers/films, and methods of forming low resistivity metal films. Ru layers/films with close-to-bulk resistivity can be prepared on substrates using Ru(CpEt)2 + O2 ALD, as well as a two-step ALD process using Ru(DMBD)(CO)3 + TBA (tertiary butyl amine) to nucleate the substrate and Ru(EtCp)2 + O2 to increase layer/film thickness. The Ru layer/films and methods of preparing Ru layers/films described herein may be suitable for use in barrierless via-fills, as well as at M0/M1 interconnect layers.

Abstract: A method of forming a conformal layer including TiN in a via includes introducing a precursor into a reaction chamber according to a first exposure schedule. The precursor includes non-halogenated metal-organic titanium. The first exposure schedule indicates precursor exposure periods. Each precursor exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the precursor during the particular duration of time. The method includes introducing a co-reactant into the reaction chamber according to a second exposure schedule. The co-reactant includes nitrogen. The second exposure schedule indicates co-reactant exposure periods. Each co-reactant exposure period is associated with a particular duration of time and a particular duty cycle over which to introduce the co-reactant during the particular duration of time. The method includes providing the conformal layer including TiN in the via based on said introducing the precursor and the co-reactant.

Abstract: The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Abstract: The present inventive concept relates to selective metal layer deposition. Embodiments include a method for atomic layer deposition (ALD) of a metal, the method comprising at least one cycle of: a) exposing a substrate, the substrate comprising a surface comprising a metal portion and an insulator portion, to a metal-organic precursor; b) depositing a metal-organic precursor on an upper surface of the metal portion of the substrate to selectively provide a metal precursor layer on the upper surface of the metal portion of the substrate; c) exposing the metal precursor layer to a co-reactant; and d) depositing the co-reactant on the metal precursor layer, wherein the co-reactant takes part in a ligand exchange with the metal precursor layer.

Abstract: A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.

Abstract: A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.

Abstract: In a formulation of a wafer cleaning brush, forming a polymer solution with a plurality of nano-scale porogens or with a synthetic pore forming agent and curing the polymer solution to form a porous polymeric material.

Abstract: A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500° C., or less.

Abstract: A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions.

Abstract: A method for detecting particle agglomeration in CMP slurries. In accordance with an implementation of the invention, a CMP slurry is tested for abrasive particle agglomeration by applying an ultra high shearing force to the slurry and analyzing its rheological behavior. Through the comparison of slurry rheological behavior, implementations of the invention make it possible to detect particle agglomeration in a slurry and to distinguish between fresh and aged slurries.

Abstract: An organic-framework zeolite interlayer dielectric is disclosed. The interlayer dielectric's resistance to chemical attack, its dielectric constant, its mechanical strength, or combinations thereof can be tailored by (1) varying the ratio of carbon-to-oxygen in the organic-framework zeolite, (2) by including tetravalent atoms other than silicon at tetrahedral sites in the organic-framework zeolite, or (3) by including combinations of pentavalent/trivalent atoms at tetrahedral sites in the organic-framework zeolite.

Abstract: The present invention relates to the manufacture and use of novel pre-coated abrasive particles and particle slurries for the chemical mechanical polishing (CMP) of semiconductor wafers, thin films, inter-layer dielectric, metals, and other components during integrated circuit, flat panel display, or MEMS manufacturing. For example, polishing slurry abrasive particles can be pre-coated with additives, such as, inhibitors and/or surfactants during manufacture of the abrasive particles or slurry. The additive's opportunity to react directly with the abrasive particles early in the particle manufacturing process provides a slurry having a more stable, selectable, and predictable ratio of abrasive particles pre-coated with a more stable, selectable, and predictable amount and type of additives.

Abstract: The present invention relates to the manufacture and use of novel pre-coated abrasive particles and particle slurries for the chemical mechanical polishing (CMP) of semiconductor wafers, thin films, inter-layer dielectric, metals, and other components during integrated circuit, flat panel display, or MEMS manufacturing. For example, polishing slurry abrasive particles can be pre-coated with additives, such as, inhibitors and/or surfactants during manufacture of the abrasive particles or slurry. The additive's opportunity to react directly with the abrasive particles early in the particle manufacturing process provides a slurry having a more stable, selectable, and predictable ratio of abrasive particles pre-coated with a more stable, selectable, and predictable amount and type of additives.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a porous dielectric layer comprising at least one active end group, and bonding at least one large atomic radii species to replace the at least one active end group, wherein a local swelling may be formed within a portion of the porous dielectric.

Abstract: A method for detecting particle agglomeration in CMP slurries. In accordance with an implementation of the invention, a CMP slurry is tested for abrasive particle agglomeration by applying an ultra high shearing force to the slurry and analyzing its rheological behavior. Through the comparison of slurry rheological behavior, implementations of the invention make it possible to detect particle agglomeration in a slurry and to distinguish between fresh and aged slurries.

Abstract: A multi-platen, multi-slurry chemical mechanical polishing method comprises providing a substrate having a surface that includes at least one nitride structure and an oxide layer atop the nitride structure, performing a first CMP process on the substrate using a first platen with a silica based slurry to remove a bulk portion of the oxide layer without exposing the nitride structure, performing a second CMP process on the substrate using a second platen with a ceria based slurry to remove a residual portion of the oxide layer and to expose at least a portion of the nitride structure, and performing a third CMP process on the substrate using the first platen with a silica based slurry to remove at least one defect caused by the ceria based slurry.