Abstract: Embodiments relate a super-heterojunction structure. A n-type modulation doping with barrier layer induces a two-dimensional electron gas (2DEG) channel and allows for vertically stacked channels without risk of reaching critical thickness limited by the strain in epitaxy. The n-type modulation doped layer is adjacent the at least one p-type layer to generate a charge balanced super-heterojunction region. A p-type ohmic contact ensures that the processes of depleting and accumulating of electrons and holes in the structure are fast enough for practical switching operation.