Patents by Inventor Manuel Angel Quevedo-Lopez

Manuel Angel Quevedo-Lopez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal
    Patent number: 8816446
    Abstract: Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: August 26, 2014
    Assignee: Texas Instruments Incorporated
    Inventors: Hiroaki Niimi, Manuel Angel Quevedo-Lopez
  • FORMATION OF METAL GATE ELECTRODE USING RARE EARTH ALLOY INCORPORATED INTO MID GAP METAL
    Publication number: 20120012941
    Abstract: Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 19, 2012
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Hiroaki Niimi, Manuel Angel Quevedo-Lopez
  • Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal
    Patent number: 8058122
    Abstract: Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.
    Type: Grant
    Filed: September 8, 2008
    Date of Patent: November 15, 2011
    Assignee: Texas Instruments Incorporated
    Inventors: Hiroaki Niimi, Manuel Angel Quevedo-Lopez
  • FORMATION OF METAL GATE ELECTRODE USING RARE EARTH ALLOY INCORPORATED INTO MID GAP METAL
    Publication number: 20090166747
    Abstract: Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.
    Type: Application
    Filed: September 8, 2008
    Publication date: July 2, 2009
    Applicant: Texas Instruments Incorporated
    Inventors: Hiroaki Niimi, Manuel Angel Quevedo-Lopez