Abstract: The present invention relates to an electronic device comprising: a first electrode comprising a contact, a ferroelectric subassembly having a ferroelectric polarization, a spin polarization subassembly which spin-polarizes an incident current and comprises a layer of ferromagnetic or ferrimagnetic material, an interfacing subassembly which is arranged between the two subassemblies and converts the spin current into a charge current, the ferroelectric subassembly and the interfacing subassembly having a contact, and a second electrode which comprises two contacts and delimits the polarization subassembly, the contact of the first electrode changing the state of polarization by applying a potential difference between this contact and another contact.

Abstract: An electronic system includes an electronic device having a stack of layers, the stack including a first electrode, a subassembly with electrically controllable remanent states, a two-dimensional electron gas, a magnetic subassembly comprising at least one magnetic layer, and a second electrode having two first contacts and a second contact. The system also includes a writing device writing remanent states by applying an electric field between the two electrodes, and a Hall-effect reading device reading the remanent state by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential.

Abstract: A device for modifying at least the direction of magnetization of a magnetic layer, the modifying device including a ferroelectric layer having a ferroelectric polarization, arranged on or under the magnetic layer so as to define a stack including at least the magnetic layer and the ferroelectric layer, a generator apt to inject an electric current into the stack along a direction parallel to the plane of the layers of the stack, and a modification unit apt to modify the ferroelectric polarization of the ferroelectric layer, for modifying, with the generator, the direction of magnetization of the magnetic layer.

Abstract: The present invention relates to a neuromimetic network comprising a set of neurons and a set of synapses, at least one neuron comprising a first stack of superimposed layers, the first stack successively comprising: a first electrode, a first barrier layer made of an electrically insulating material, and a second electrode, the first electrode, the first barrier layer and the second electrode forming a first ferroelectric tunnel junction, at least one synapse comprising a second stack of superimposed layers, the second stack successively comprising: a third electrode, a second barrier layer made of an electrically insulating material, and a fourth electrode, the third electrode, the second barrier layer and the fourth electrode forming a second ferroelectric tunnel junction.

Abstract: The present invention relates to an electronic device including an input and an output, the device generating an output voltage when the input of the device is supplied, the device comprising: a conversion unit converting a spin current into a charge current having an amplitude and a sign, a spin current application unit applying a spin current to the conversion unit, a ferroelectric layer, which has a ferroelectric polarization and is arranged such that the ferroelectric polarization controls at least one among the amplitude and the sign of the charge current, and an electric field application unit suitable for applying an electric field to the ferroelectric layer to control the ferroelectric polarization.

Abstract: The present invention relates to an electronic device including an input and an output, the device generating an output voltage when the input of the device is supplied, the device comprising: a conversion unit converting a spin current into a charge current having an amplitude and a sign, a spin current application unit applying a spin current to the conversion unit, a ferroelectric layer, which has a ferroelectric polarization and is arranged such that the ferroelectric polarization controls at least one among the amplitude and the sign of the charge current, and an electric field application unit suitable for applying an electric field to the ferroelectric layer to control the ferroelectric polarization.

Abstract: The present invention relates to a neuromimetic network comprising a set of neurons and a set of synapses, at least one neuron comprising a first stack of superimposed layers, the first stack successive1y comprising: a first electrode, a first barrier layer made of an electrically insulating material, and a second electrode, the first electrode, the first barrier layer and the second electrode forming a first ferroelectric tunnel junction, at least one synapse comprising a second stack of superimposed layers, the second stack successive1y comprising: a third electrode, a second barrier layer made of an electrically insulating material, and a fourth electrode, the third electrode, the second barrier layer and the fourth electrode forming a second ferroelectric tunnel junction.

Abstract: The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization.

Abstract: The invention relates to a device (10) including a plurality of thin layers (12, 14, 18) comprising a layer (14) formed with a polarizable ferroelectric material according to several polarization directions depending on an electric voltage applied to said layer of ferroelectric material, surrounded by a pair of conductive layers (12, 18) forming electrodes. The device of the invention comprises an intermediate layer (16) between said ferroelectric material layer (14) and one of the conductive layers (12, 18), said intermediate layer (16) consisting of a material for which the electronic properties are modified according to the direction of polarization in said adjacent ferroelectric material layout (14). The device for the invention finds particularly advantageous applications as a memory element of a non-volatile memory, as an element of a programmable logic circuit and as a microswitch.

Abstract: A device comprising: an assembly consisting of two, respectively upper and lower thin layers each forming a ferromagnetic element and separated by a thin layer forming a non magnetic element, said assembly being made up so that the layers forming the ferromagnetic elements are magnetically coupled through the layer forming a non magnetic element; an electrode, a layer forming a ferroelectric element in which the polarization may be oriented in several directions by applying an electric voltage through said layer, said layer forming a ferroelectric element being positioned between the layer forming a lower ferromagnetic element and the electrode; said device being configured so as to allow control of the magnetic configuration of the layers forming ferromagnetic elements by the direction of the polarization in the layer forming a ferroelectric element.

Abstract: The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization.

Abstract: A device comprising: an assembly consisting of two, respectively upper and lower thin layers each forming a ferromagnetic element and separated by a thin layer forming a non magnetic element, said assembly being made up so that the layers forming the ferromagnetic elements are magnetically coupled through the layer forming a non magnetic element; an electrode, a layer forming a ferroelectric element in which the polarization may be oriented in several directions by applying an electric voltage through said layer, said layer forming a ferroelectric element being positioned between the layer forming a lower ferromagnetic element and the electrode; said device being configured so as to allow control of the magnetic configuration of the layers forming ferromagnetic elements by the direction of the polarization in the layer forming a ferroelectric element.