Abstract: A package comprising an acoustic device, a polymer frame coupled to the acoustic device, a plurality of frame interconnects located in the polymer frame, where the plurality of frame interconnects are coupled to the acoustic device, a polymer cap layer coupled to the acoustic device though the polymer frame, where the polymer cap layer is configured as a cap for the acoustic device, a plurality of cap interconnects located in the polymer cap layer, where the plurality of cap interconnects are coupled to the plurality of frame interconnects, and a cavity located between the acoustic device and the polymer cap layer. The acoustic device includes a substrate and an acoustic element coupled to the substrate.

Abstract: A multi-level stacked AW filter package including a first acoustic wave (AW) filter stacked on a second AW filter employs semiconductor fabrication methods and structures, including a metallization layer comprising interconnects to couple a contact surface to the second AW filter. Each AW filter includes an AW filter circuit on a semiconductor substrate. A second substrate disposed on a frame on the substrate protects the AW filter circuit. In a multi-level AW filter package, the second substrate of the first AW filter comprises a glass substrate with a similar expansion rate as the semiconductor substrate. The interconnects coupling the second AW filter to the contact surface are disposed on insulators on the side wall surfaces of the semiconductor substrates of the first AW filter for isolation. In a stacked AW filter package comprising a single AW filter, the interconnects couple the contact surface to the AW filter.

Abstract: Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing filters with electroacoustic vertical coupling. One aspect is a filter comprising a piezoelectric substrate having a first piezoelectric surface and a second piezoelectric surface opposite the first piezoelectric surface. The filter further comprises a first electroacoustic resonator comprising a first interdigital transducer (IDT) disposed on or over the first piezoelectric surface of the piezoelectric substrate and a second electroacoustic resonator comprising a second IDT disposed on or over the second piezoelectric surface of the piezoelectric substrate. The second electroacoustic resonator is electrically coupled to the first electroacoustic resonator in series or in parallel.

Abstract: A stackable battery module for a battery system of a battery electric vehicle includes a plurality of battery cells and a battery module housing arranged to frame the plurality of battery cells. A plurality of battery modules interlock to form a battery module stack and laterally encase the battery module stack when several battery modules are stacked. The battery module includes centering elements arranged on the outside surfaces of the battery module housing to secure and center the stacked battery module inside a housing of the battery system. The battery module housing has a laterally framing tongue element and a laterally framing groove element corresponding to the tongue element. The tongue element of one battery module interlocks with the groove element of further battery module when the battery modules are stacked with an additional battery module to form a battery module stack and a coolant channel between the battery modules.

Abstract: A stacked AW filter package includes a first substrate stacked on a second substrate. The first substrate has a first AW filter circuit on first surface and a metal layer on a second surface. The second substrate has a second AW filter circuit disposed in a cavity between the metal layer of the first substrate and a third surface of the second substrate. The metal layer is coupled to the second AW filter circuit by a metal interconnect formed in a metallization layer on a side surface of the first substrate. The metal layer provides isolation to reduce cross-talk (e.g., electromagnetic interference) within the stacked AW filter package between the first AW filter circuit and the second AW filter circuit. Including the metal layer in the stacked AW filter package improves signal quality of transmitted and received signals filtered in the first and second AW filter circuits.

Abstract: A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.

Abstract: Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing filters with electroacoustic vertical coupling. One aspect is a filter comprising a piezoelectric substrate having a first piezoelectric surface and a second piezoelectric surface opposite the first piezoelectric surface. The filter further comprises a first electroacoustic resonator comprising a first interdigital transducer (IDT) disposed on or over the first piezoelectric surface of the piezoelectric substrate and a second electroacoustic resonator comprising a second IDT disposed on or over the second piezoelectric surface of the piezoelectric substrate. The second electroacoustic resonator is electrically coupled to the first electroacoustic resonator in series or in parallel.

Abstract: A package comprising an acoustic device, a polymer frame coupled to the acoustic device, a plurality of frame interconnects located in the polymer frame, where the plurality of frame interconnects are coupled to the acoustic device, a polymer cap layer coupled to the acoustic device though the polymer frame, where the polymer cap layer is configured as a cap for the acoustic device, a plurality of cap interconnects located in the polymer cap layer, where the plurality of cap interconnects are coupled to the plurality of frame interconnects, and a cavity located between the acoustic device and the polymer cap layer. The acoustic device includes a substrate and an acoustic element coupled to the substrate.

Abstract: A stacked AW filter package includes a first substrate stacked on a second substrate. The first substrate has a first AW filter circuit on first surface and a metal layer on a second surface. The second substrate has a second AW filter circuit disposed in a cavity between the metal layer of the first substrate and a third surface of the second substrate. The metal layer is coupled to the second AW filter circuit by a metal interconnect formed in a metallization layer on a side surface of the first substrate. The metal layer provides isolation to reduce cross-talk (e.g., electromagnetic interference) within the stacked AW filter package between the first AW filter circuit and the second AW filter circuit. Including the metal layer in the stacked AW filter package improves signal quality of transmitted and received signals filtered in the first and second AW filter circuits.

Abstract: A package that includes an acoustic device, a frame coupled to the acoustic device and a cap substrate coupled to the acoustic device through the frame. The acoustic device includes a substrate and an acoustic element coupled to the substrate. The cap substrate includes an inductor. The cap substrate is configured as a cap for the acoustic device. The package includes a cavity located between the acoustic device and the cap substrate. The frame may include a polymer frame.

Abstract: A multi-level stacked AW filter package including a first acoustic wave (AW) filter stacked on a second AW filter employs semiconductor fabrication methods and structures, including a metallization layer comprising interconnects to couple a contact surface to the second AW filter. Each AW filter includes an AW filter circuit on a semiconductor substrate. A second substrate disposed on a frame on the substrate protects the AW filter circuit. In a multi-level AW filter package, the second substrate of the first AW filter comprises a glass substrate with a similar expansion rate as the semiconductor substrate. The interconnects coupling the second AW filter to the contact surface are disposed on insulators on the side wall surfaces of the semiconductor substrates of the first AW filter for isolation. In a stacked AW filter package comprising a single AW filter, the interconnects couple the contact surface to the AW filter.

Abstract: The present invention relates to a novel method for detoxification of trichothecene contaminated material. More specifically the present invention pertains to a method for biotransformation of a trichothecene by contacting material contaminated with trichothecenes with an exogenous non-animal glutathione-S-transferase (GST) having substrate specificity for the epoxide ring of the trichothecene. The invention further relates to recombinant GSTs and transgenic plants and animals expressing said GSTs.

Abstract: A 3D body scanner for generating 3D body models includes a depth sensor for acquiring depth data of a field of view and a control unit that controls the 3D body scanner and processes the depth data. The control unit can extract body characteristics of a person from the acquired depth data and can compare the extracted body characteristics of the person with body characteristics of already registered users and activate the processing and recording of the depth data from the depth sensor when the comparison determines that the person is a registered user.

Abstract: A wafer-level package for micro-acoustic devices and a method of manufacture is provided. The package comprises a base wafer with electric device structures. A frame structure is sitting on top of the base wafer enclosing particular device areas for the micro-acoustic devices. A cap wafer provided with a thin polymer coating is bonded to the frame structure to form a closed cavity over each device area and to enclose within the cavity the device structures arranged on the respective device area.

Abstract: A passive on glass (POG) on filter capping apparatus may include an acoustic filter die. The apparatus may further include a capping die electrically coupled to the acoustic filter die. The capping die may include a 3D inductor.

Abstract: A passive on glass (POG) on filter capping apparatus may include an acoustic filter die. The apparatus may further include a capping die electrically coupled to the acoustic filter die. The capping die may include a 3D inductor.