Abstract: A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing layer and the first region, wherein the thickness of the isolation layer is selected to control optical loss from the first region to the absorbing layer in the second region and thereby to attenuate one or more high order lateral optical modes of the device. The one or more high order lateral optical modes are attenuated relative to the fundamental lateral mode to provide the device with a high kink power. The device can be a 980 nm ridge diode laser where the thickness of an oxide insulating layer around the ridge is selected to control optical losses into a gold contact layer and thereby attenuate the first order lateral mode, providing the laser with a kink power of at least about 250 mW.

Abstract: A diode laser having a plurality of layers including a thin (e.g., about 0.3 ?m or less) p-type cladding layer, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction to produce an optical field distribution with a larger fraction of the distribution in n-type layers than in p-type layers of the laser. The layers can be configured to produce a ridge diode laser having an internal loss less than about 3 cm?1, and able to generate an approximately 980 nm laser beam with a transverse divergence of about 28° or less, and a spot size of about 0.8 ?m or more.

Abstract: A diode laser formed by a plurality of layers including n-type layers and p-type layers, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction so as to generate an optical field distribution with a larger fraction in n-type layers than in p-type layers, and configured to generate a beam with a divergence of less than about 28° in the growth direction. The layers include an active layer for generating the optical field, a trap layer for attracting the optical field, and a separation layer between the active layer and the trap layer for repelling the optical field. The laser can be configured to have an internal loss of about 1.2 cm?1 or less, and to generate a laser beam with a spot size of at least about 1.1 ?m and a divergence of approximately 13° in the growth direction. If the length of the laser is at least about 1 mm, the threshold current density of the laser can be less than about 400 A cm?2.

Abstract: A diode laser having a plurality of layers including a thin (e.g., about 0.3 &mgr;m or less) p-type cladding layer, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction to produce an optical field distribution with a larger fraction of the distribution in n-type layers than in p-type layers of the laser. The layers can be configured to produce a ridge diode laser having an internal loss less than about 3 cm−1, and able to generate an approximately 980 nm laser beam with a transverse divergence of about 28° or less, and a spot size of about 0.8 &mgr;m or more.

Abstract: A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing layer and the first region, wherein the thickness of the isolation layer is selected to control optical loss from the first region to the absorbing layer in the second region and thereby to attenuate one or more high order lateral optical modes of the device. The one or more high order lateral optical modes are attenuated relative to the fundamental lateral mode to provide the device with a high kink power. The device can be a 980 nm ridge diode laser where the thickness of an oxide insulating layer around the ridge is selected to control optical losses into a gold contact layer and thereby attenuate the first order lateral mode, providing the laser with a kink power of at least about 250 mW.

Abstract: A diode laser formed by a plurality of layers including n-type layers and p-type layers, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction so as to generate an optical field distribution with a larger fraction in n-type layers than in p-type layers, and configured to generate a beam with a divergence of less than about 28° in the growth direction. The layers include an active layer for generating the optical field, a trap layer for attracting the optical field, and a separation layer between the active layer and the trap layer for repelling the optical field. The laser can be configured to have an internal loss of about 1.2 cm−1 or less, and to generate a laser beam with a spot size of at least about 1.1 &mgr;m and a divergence of approximately 13° in the growth direction. If the length of the laser is at least about 1 mm, the threshold current density of the laser can be less than about 400 A cm−2.

Abstract: The high power laser diode comprise an active region and a trapping region separated by a passive region, all situated between a p-type confinement region and an n type confinement region such that the radiation field is attracted toward and spread into the trapping region assuring a reduced value for the confinement factor into the active region.