Abstract: Semiconductor device with a first structure comprising a plurality of at least in part parallel linear structures, a second structure comprising a plurality of pad structures, forming at least in part one of the group of linear structure, curved structure, piecewise linear structure and piecewise curved structure which is positioned at an angle to the first structure, and the plurality of pad structures are intersecting at least one of the linear structures in the first structure. An electronic device with at least one semiconductor device, methods for manufacturing a semiconductor device and a mask system are also covered.

Abstract: Semiconductor device with a first structure comprising a plurality of at least in part parallel linear structures, a second structure comprising a plurality of pad structures, forming at least in part one of the group of linear structure, curved structure, piecewise linear structure and piecewise curved structure which is positioned at an angle to the first structure, and the plurality of pad structures are intersecting at least one of the linear structures in the first structure. An electronic device with at least one semiconductor device, methods for manufacturing a semiconductor device and a mask system are also covered.

Abstract: A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiO2 and SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.

Abstract: A method of forming a semiconductor device includes patterning a layer stack to form single conductive lines and single landing pads. Patterning of the layer stack includes two lithographic exposures using a set of two different photomasks. The landing pads are arranged at on side of an array region defined by a plurality of conductive lines. A set of photomasks used in the method of forming a semiconductor device includes a first photomask including patterns corresponding to the conductive lines and a second photomask including patterns corresponding to the landing pads. A semiconductor device includes conductive lines and landing pads connected with corresponding ones of said conductive lines wherein the landing pads are arranged in a staggered fashion at one side of an array region defined by a plurality of conductive lines.