Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: A wafer transporting method includes following operations. A plurality of wafers are received in a semiconductor container attached to a mobile vehicle. An air processing system is coupled to a wall of the semiconductor container. The air processing system includes an inlet valve, an outlet valve, a pump between the inlet valve and the outlet valve, and a desiccant coupled to the pump. The semiconductor container is moved. The pump of the air processing system is turned on to extract air from inside the semiconductor container into the air processing system through the inlet valve. Humidity of the air is reduced when the air passes through the desiccant of the air processing system. The air is returned back to the semiconductor container through the outlet valve.

Abstract: A method and a system for determining a discharging process of a battery are provided. The method includes the following steps. Measuring charging/discharging information of the battery. Calculating a charging/discharging characteristic of the battery according to the charging/discharging information. Aligning the charging/discharging characteristic of the battery according to a comparison characteristic point of a comparison characteristic to obtain an aligned charging/discharging characteristic. Determining whether the battery is normal according to the aligned charging/discharging characteristic or a coulombic efficiency of the battery. Calculating a safety probability of the battery according to the aligned charging/discharging characteristic and resistance of an internal short circuit of the battery when the battery is determined as abnormal. Determining a discharging process of the battery according to the safety probability of the battery.

Abstract: A fire control device comprises a box, a power wire, a pressure relieving check valve, a fire extinguishing check valve and a fire extinguisher. The box is configured to accommodate a battery system, and the power wire is configured to couple to the battery system. The pressure relieving check valve and the fire extinguishing check valve extend through the box, and a state of the pressure relieving check valve is switched between open and closed states according to a pressure difference between an inside and an outside of the box. A state of the fire extinguishing check valve is switched between open and close states according to a pressure difference between the inside and the outside of the box. The fire extinguisher is connected to the pressure relieving check valve. The fire extinguisher is switched between starting and stopping modes according to the state of the pressure relieving check valve.

Abstract: A method and a system for detecting resistance of an internal short circuit of a battery are provided. The method includes the following steps. Measuring charging/discharging information of the battery. Calculating a charging/discharging characteristic of the battery according to the charging/discharging information. Aligning the charging/discharging characteristic of the battery according to a comparison characteristic point of a comparison characteristic to obtain an aligned charging/discharging characteristic. Determining whether the battery is normal according to the aligned charging/discharging characteristic or a coulombic efficiency of the battery; and when the battery is determined as abnormal, calculating aligned charging/discharging information according to the aligned charging/discharging characteristic, and calculating the resistance of the internal short circuit of the battery according to the aligned charging/discharging information.

Abstract: A fire control device comprises a box, a power wire, a pressure relieving check valve, a fire extinguishing check valve and a fire extinguisher. The box is configured to accommodate a battery system, and the power wire is configured to couple to the battery system. The pressure relieving check valve and the fire extinguishing check valve extend through the box, and a state of the pressure relieving check valve is switched between open and closed states according to a pressure difference between an inside and an outside of the box. A state of the fire extinguishing check valve is switched between open and close states according to a pressure difference between the inside and the outside of the box. The fire extinguisher is connected to the pressure relieving check valve. The fire extinguisher is switched between starting and stopping modes according to the state of the pressure relieving check valve.

Abstract: A method and a system for detecting resistance of an internal short circuit of a battery are provided. The method includes the following steps. Measuring charging/discharging information of the battery. Calculating a charging/discharging characteristic of the battery according to the charging/discharging information. Aligning the charging/discharging characteristic of the battery according to a comparison characteristic point of a comparison characteristic to obtain an aligned charging/discharging characteristic. Determining whether the battery is normal according to the aligned charging/discharging characteristic or a coulombic efficiency of the battery; and when the battery is determined as abnormal, calculating aligned charging/discharging information according to the aligned charging/discharging characteristic, and calculating the resistance of the internal short circuit of the battery according to the aligned charging/discharging information.

Abstract: A method and a system for determining a discharging process of a battery are provided. The method includes the following steps. Measuring charging/discharging information of the battery. Calculating a charging/discharging characteristic of the battery according to the charging/discharging information. Aligning the charging/discharging characteristic of the battery according to a comparison characteristic point of a comparison characteristic to obtain an aligned charging/discharging characteristic. Determining whether the battery is normal according to the aligned charging/discharging characteristic or a coulombic efficiency of the battery. Calculating a safety probability of the battery according to the aligned charging/discharging characteristic and resistance of an internal short circuit of the battery when the battery is determined as abnormal. Determining a discharging process of the battery according to the safety probability of the battery.