Abstract: A coating apparatus for forming a coating film over a substrate includes a spin chuck for holding and rotating the substrate, a central coating nozzle over a central portion of the substrate, a plurality of first coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same first distance, and a plurality of second coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same second distance, wherein the second distance is greater than the first distance.

Abstract: A coating apparatus for forming a coating film over a substrate includes a spin chuck for holding and rotating the substrate, a central coating nozzle over a central portion of the substrate, a plurality of first coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same first distance, and a plurality of second coating nozzles surrounding the central coating nozzle and spaced apart from the central coating nozzle by substantially a same second distance, wherein the second distance is greater than the first distance.

Abstract: An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

Abstract: A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

Abstract: A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

Abstract: An apparatus includes a body and a surface for receiving a semiconductor wafer carrier is provided. A nozzle and a venting hole are provided on the surface. The semiconductor wafer carrier has at least one selectively closable capped opening at a bottom, top and/or side surface thereof. The capped opening is configured to couple to, and be accessible by, the nozzle and receive gas output from the nozzle so as to create a substantially oxygen free environment within the semiconductor wafer carrier. The vent hole is configured to allow gas to flow out of the semiconductor wafer carrier. In addition, the apparatus includes a sensor and a controller. The sensor is configured to monitor an ambient condition in the semiconductor wafer carrier, and the controller is configured to adjust a control valve based on the ambient condition so as to control the gas flow or output from the nozzle.

Abstract: The present invention presents a metal wire structure with high-melting-point protective layer and its manufacturing method, of which the structure comprising: a core and a protective layer; the core is made of metal, and the protective layer made of metal carbide or metal nitride. The manufacturing method includes the following steps: preparation, discharge and finish. The protective layer is gradually bonded onto the exterior surface of the core until a preset thickness of the protective layer, and then fully covered onto the core through a plating process of discharge reaction at temperature over 5000?. With this design, the present invention has advantages and efficacies such as: without generation of silicide and producing protective effects.