Abstract: A method for cleaning a substrate prior to tungsten deposition is disclosed, said substrate having via holes and trenches lines thereon. The method includes steps ofproviding a solution of hydroxylamine sulfate; dipping said substrate in said solution; and agitating said solution by an agitating device.

Abstract: A process for fabricating a device having a TiW barrier layer and a relatively shallow junction contacted with a silicide layer wherein said TiW barrier layer and said silicide layer are simultaneously formed comprising steps of preparing a Si substrate, applying a layer including therein a Ti and an appropriate X element such as Co or Pt on the Si substrate, applying a W layer on the layer including therein the Ti and the X element for forming a W/X-Ti/Si structure, and transforming the W/X-Ti/Si structure into a TiW/silicide/Si structure to obtain the device having a TiW barrier layer and a silicide layer contacted shallow junction. The present invention provides a simplified process for fabricating such a device having therewith a junction of a low resistance and a high temperature stability.

Abstract: A method of improving the high temperature stability of PtSi/Si structure is disclosed. A sufficient amount of fluorine-contained ion is implanted into the PtSi/Si structure or Pt/Si structure or Si substrate. The characteristics of the resulted PtSi/Si structure remain unchanged even after annealing at 800.degree. C. in contrast to the conventional PtSi/Si structure whose characteristics start to degrade at 700.degree. C. All devices contacted by PtSi, either ohmic or Schottky contact, are able to withstand an 800.degree. C. high temperature treatment without degradation.