Patents by Inventor Mao D. Lim

Mao D. Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170121813
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Application
    Filed: January 17, 2017
    Publication date: May 4, 2017
    Inventors: Maosheng ZHAO, Juan Carlos ROCHA-ALVAREZ, Inna SHMURUN, Soovo SEN, Mao D. LIM, Shankar VENKATARAMAN, Ju-Hyung LEE
  • Publication number: 20140158048
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Application
    Filed: February 12, 2014
    Publication date: June 12, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Maosheng ZHAO, Juan Carlos ROCHA- ALVAREZ, Inna SHMURUN, Soovo SEN, Mao D. LIM, Shankar VENKATARAMAN, Ju-Hyung LEE
  • Publication number: 20100095891
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Application
    Filed: January 7, 2010
    Publication date: April 22, 2010
    Inventors: Maosheng Zhao, Juan Carlos Rocha-Alvarez, Inna Shmurun, Soova Sen, Mao D. Lim, Shankar Venkataraman, Ju-Hyung Lee
  • Patent number: 7654224
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: February 2, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Maosheng Zhao, Juan Carlos Rocha-Alvarez, Inna Shmurun, Soova Sen, Mao D. Lim, Shankar Venkataraman, Ju-Hyung Lee
  • Publication number: 20090145360
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Application
    Filed: February 17, 2009
    Publication date: June 11, 2009
    Inventors: Maosheng Zhao, Juan Carlos Rocha-Alvarez, Inna Shmurun, Soova Sen, Mao D. Lim, Shankar Venkataraman, Ju-Hyung Lee
  • Patent number: 7500445
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Grant
    Filed: January 27, 2003
    Date of Patent: March 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Maosheng Zhao, Juan Carlos Rocha-Alvarez, Inna Shmurun, Soova Sen, Mao D. Lim, Shankar Venkataraman, Ju-Hyung Lee
  • Patent number: 7464717
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Grant
    Filed: June 19, 2006
    Date of Patent: December 16, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Maosheng Zhao, Juan Carlos Rocha-Alvarez, Inna Shmurun, Soova Sen, Mao D. Lim, Shankar Venkataraman, Ju-Hyung Lee
  • Patent number: 7465357
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Grant
    Filed: June 23, 2006
    Date of Patent: December 16, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Maosheng Zhao, Juan Carlos Rocha-Alvarez, Inna Shmurun, Soova Sen, Mao D. Lim, Shankar Venkataraman, Ju-Hyung Lee
  • Publication number: 20040144490
    Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
    Type: Application
    Filed: January 27, 2003
    Publication date: July 29, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Maosheng Zhao, Juan Carlos Rocha-Alvarez, Inna Shmurun, Soova Sen, Mao D. Lim, Shankar Venkataraman, Ju-Hyung Lee