Abstract: The present disclosure pertains to a battery and a method of making the same. The battery includes first and second metal substrates, a first solid-state and/or thin-film battery cell on the first metal substrate, a second solid-state and/or thin-film battery cell on the second metal substrate, and a hermetic seal in a peripheral region of the first and second metal substrates. The first and second battery cells are between the first and second metal substrates, and face each other. The method includes respectively forming first and second solid-state and/or thin-film battery cells on first and second metal substrates, placing the second battery cell on the first battery cell so that the first and second battery cells are between the first and second metal substrates, and hermetically sealing the first and second battery cells in a peripheral region of the first and second metal substrates.

Abstract: The present disclosure pertains to a battery and a method of making the same. The battery includes first and second metal substrates, a first solid-state and/or thin-film battery cell on the first metal substrate, a second solid-state and/or thin-film battery cell on the second metal substrate, and a hermetic seal in a peripheral region of the first and second metal substrates. The first and second battery cells are between the first and second metal substrates, and face each other. The method includes respectively forming first and second solid-state and/or thin-film battery cells on first and second metal substrates, placing the second battery cell on the first battery cell so that the first and second battery cells are between the first and second metal substrates, and hermetically sealing the first and second battery cells in a peripheral region of the first and second metal substrates.

Abstract: A solid-state battery and a method of making the same are disclosed. The battery includes a base frame or support, first and second exterior contacts on the base frame/support, stacked solid-state battery unit cells, first and second electrical connections, and encapsulation in contact with the base frame/support and covering the solid-state battery unit cells and the electrical connections. Each stacked solid-state battery unit cell is on a metal substrate and has exposed cathode and anode current collectors. The electrical connections respectively electrically connect the exposed cathode and anode current collectors to the first and second exterior contacts. The method includes forming the stacked solid-state battery unit cells on the base frame/support, forming the exterior contacts on the base frame/support, electrically connecting the exposed cathode and anode current collectors to the respective exterior contacts, and encapsulating the solid-state battery unit cells and the electrical connections.

Abstract: The present disclosure pertains to a battery and a method of making the same. The battery includes first and second metal substrates, a first solid-state and/or thin-film battery cell on the first metal substrate, a second solid-state and/or thin-film battery cell on the second metal substrate, and a hermetic seal in a peripheral region of the first and second metal substrates. The first and second battery cells are between the first and second metal substrates, and face each other. The method includes respectively forming first and second solid-state and/or thin-film battery cells on first and second metal substrates, placing the second battery cell on the first battery cell so that the first and second battery cells are between the first and second metal substrates, and hermetically sealing the first and second battery cells in a peripheral region of the first and second metal substrates.

Abstract: Embodiments of the disclosure pertain to a multi-layer barrier for a flexible substrate supporting electronic and/or microelectromechanical system (MEMS) devices. Apparatuses including a substrate, a first metal nitride layer, a first oxide layer on or over the first metal nitride layer, a second metal nitride layer and a second oxide layer on or over the first oxide layer, and a device layer on or over the first oxide layer or both the first and second oxide layers are disclosed. When the device layer is on or over the first oxide layer, the second metal nitride layer is on or over the device layer, and the second oxide layer is on or over the on or over the second metal nitride layer. When the device layer is on or over both the first and second oxide layers, the second metal nitride layer is on or over the second oxide layer. A method of making the same is also disclosed.

Abstract: A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal. The antenna has (i) an inner terminal continuous with the uppermost layer of metal or connected to the uppermost layer of metal through one or more contacts, and (ii) an outer terminal connected to the uppermost layer of metal through one or more contacts and optionally a metal bridge or strap.

Abstract: An electronic device, and methods of manufacturing the same are disclosed. The method of manufacturing the electronic device includes forming a first metal layer on a first substrate, forming an integrated circuit or a discrete electrical component on a second substrate, forming electrical connectors on input and/or output terminals of the integrated circuit or discrete electrical component, forming a second metal layer on the first metal layer, the second metal layer improving adhesion and/or electrical connectivity of the first metal layer to the electrical connectors on the integrated circuit or discrete electrical component, and electrically connecting the electrical connectors to the second metal layer.

Abstract: A wireless communication device having an integrated antenna, and methods for making and using the same are disclosed. The device generally includes (a) a substrate; (b) an integrated circuit (IC) comprising a plurality of printed and/or thin film layers and/or structures on the substrate, (c) a dielectric or insulator layer in at least one area of the substrate other than the IC; and (d) an antenna on the dielectric or insulator layer, comprising one or more metal traces. The plurality of printed and/or thin film layers and/or structures include an uppermost layer of metal.

Abstract: An electronic device, and methods of manufacturing the same are disclosed. The method of manufacturing the electronic device includes forming a first metal layer on a first substrate, forming an integrated circuit or a discrete electrical component on a second substrate, forming electrical connectors on input and/or output terminals of the integrated circuit or discrete electrical component, forming a second metal layer on the first metal layer, the second metal layer improving adhesion and/or electrical connectivity of the first metal layer to the electrical connectors on the integrated circuit or discrete electrical component, and electrically connecting the electrical connectors to the second metal layer.

Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention.

Abstract: A method of forming a pattern comprising the steps of forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate, irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate, and removing the predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution. ##STR1## wherein Ar is a substituted or non-substituted aryl group.