Abstract: A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.

Abstract: Disclosed is a selective field-assisted machining system. The system includes a micron-level high-speed identification module, an in-situ laser assisted module, an ultrasonic vibration module, an energy field loading high-speed control module, and a diamond tool. The micron-level high-speed identification module is used to quickly identify the type of a material substrate of a workpiece to be processed, process the identification information into a corresponding control signal, and send same to the energy field loading high-speed control module to implement selective processing of the workpiece to be processed, i.e. to process brittle particles using in-situ laser assisted machining and to process a soft metal substrate using ultrasonic vibration processing. In the present invention, ultra-precision cutting of brittle particles and a soft metal substrate can be completed at the same time in a single processing process.

Abstract: A method for correcting critical dimension (CD) measurements of a lithographic tool includes steps as follows. A correction pattern having a first sub-pattern parallel to a first direction and a second sub-pattern parallel to a second direction is provided on a lithographic mask; wherein the first sub-pattern and the second sub-pattern come cross with each other. A first After-Develop-Inspection critical dimension (ADI CD) of a developed pattern formed on a photo-sensitive layer and transferred from the correction pattern is measured using the lithographic tool along a first scanning direction. A second ADI CD of the developed pattern is measured using the lithographic tool along a second scanning direction. The first ADI CD is subtracted from the second ADI CD to obtain a measurement bias value. Exposure conditions and/or measuring parameters of the lithographic tool are adjusted according to the measurement bias value.

Abstract: The present disclosure generally provides an apparatus and method for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore, and a gas deflector having a length and a width unequal to the length coupled to the backing plate by a plurality of outward fasteners coupled to a plurality of outward threaded holes formed in the backing plate, in which a spacer is disposed between the backing plate and the gas deflector, and in which a length to width ratio of the gas deflector is about 0.1:1 to about 10:1.

Abstract: The embodiments of the disclosure provide a patterning method, which includes the following processes. A target layer is formed on a substrate. A hard mask layer is formed over the target layer. A first patterning process is performed on the hard mask layer by using a photomask having a first pattern with a first pitch. The photomask is shifted along a first direction by a first distance. A second patterning process is performed on the hard mask layer by using the photomask that has been shifted, so as to form a patterned hard mask. The target layer is patterned using the patterned hard mask to form a patterned target layer. The target layer has a second pattern with a second pitch less than the first pitch.

Abstract: A lens-free microscopic imaging system (11), which is used to image microbeads (15) with pattern codes, includes an illumination system (11a) and an imaging system (11b). The illumination system (11a) includes an illumination light source (111) and an excitation light source (112). The imaging system (11b) includes an image sensor (113). The illumination light source (111) is used to emit illumination light to irradiate the microbeads (15), causing the irradiated microbeads (15) to be imaged on the image sensor. The excitation light source (112) is used to emit excitation light to excite the microbeads (15) to generate specific signals. The image sensor (113) is used to collect the images of the microbeads (15) and the specific signals to generate images. The imaging system (11) does not require a lens system. The present disclosure improves a detection efficiency of the microbeads (15).

Abstract: Disclosed is a selective field-assisted machining system. The system includes a micron-level high-speed identification module, an in-situ laser assisted module, an ultrasonic vibration module, an energy field loading high-speed control module, and a diamond tool. The micron-level high-speed identification module is used to quickly identify the type of a material substrate of a workpiece to be processed, process the identification information into a corresponding control signal, and send same to the energy field loading high-speed control module to implement selective processing of the workpiece to be processed, i.e. to process brittle particles using in-situ laser assisted machining and to process a soft metal substrate using ultrasonic vibration processing. In the present invention, ultra-precision cutting of brittle particles and a soft metal substrate can be completed at the same time in a single processing process.

Abstract: Disclosed is a selective field-assisted machining system. The system includes a micron-level high-speed identification module, an in-situ laser assisted module, an ultrasonic vibration module, an energy field loading high-speed control module, and a diamond tool. The micron-level high-speed identification module is used to quickly identify the type of a material substrate of a workpiece to be processed, process the identification information into a corresponding control signal, and send same to the energy field loading high-speed control module to implement selective processing of the workpiece to be processed, i.e. to process brittle particles using in-situ laser assisted machining and to process a soft metal substrate using ultrasonic vibration processing. In the present invention, ultra-precision cutting of brittle particles and a soft metal substrate can be completed at the same time in a single processing process.

Abstract: A grounding strap for a process chamber includes a core layer. The grounding strap further includes an outer layer. The outer layer includes at least 99% aluminum.

Abstract: The present disclosure relates generally to immunoglobulin-related compositions (e.g., multi-specific antibodies or antigen binding fragments thereof) that can bind to the GPA33 protein. The multi-specific antibodies of the present technology are useful in methods for detecting and treating a GPA33-associated cancer in a subject in need thereof.

Abstract: Disclosed are a solid-state microwave source and a branch consistency control method thereof. The branch consistency control method includes: collecting phase information of each branch unit under each of a plurality of preset target powers, and performing phase adjustment for each branch unit based on the phase information under each of the target powers; assembling coarsely-adjusted N branch units, a driver module, a power distribution module, a radial combiner, a circulator, and a waveguide coupler; adjusting a branch power by using the driver module and the power distribution module, to collect the phase information of each branch unit under each of the target powers; and when the phase information of each branch unit under each of the target powers meets a preset condition, performing phase adjustment for the branch unit based on the phase information.

Abstract: Disclosed are a solid-state microwave source and a branch consistency control method thereof. The branch consistency control method includes: collecting phase information of each branch unit under each of a plurality of preset target powers, and performing phase adjustment for each branch unit based on the phase information under each of the target powers; assembling coarsely-adjusted N branch units, a driver module, a power distribution module, a radial combiner, a circulator, and a waveguide coupler; adjusting a branch power by using the driver module and the power distribution module, to collect the phase information of each branch unit under each of the target powers; and when the phase information of each branch unit under each of the target powers meets a preset condition, performing phase adjustment for the branch unit based on the phase information.

Abstract: Disclosed are an impedance matching apparatus and method for a solid-state microwave source. The impedance matching apparatus is connected to a solid-state microwave source and includes a detection module and a control module. The control module includes a frequency control unit and a power determining unit. The frequency control unit is configured to adjust a current frequency of a phase-locked source of the solid-state microwave source according to a received frequency modulation (FM) instruction. The power determining unit is configured to perform following steps: controlling a driver module of the solid-state microwave source to gradually increase a total incident power, and determining a change trend of a total reflected power of the solid-state microwave source; controlling the driver module to reduce the incident power; setting the FM instruction, and sending the set FM instruction to the frequency control unit.

Abstract: A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.

Abstract: A microbead used in biological detection is provided. The microbead includes a first coating layer, a magnetic layer, and a second coating layer. The first coating layer includes a first top surface and a first side surface connecting the first top surface. The magnetic layer is formed on the first top surface, and the magnetic layer includes a second top surface away from the first top surface and a second side surface connecting the second top surface. The second coating layer includes a top wall and a periphery. The top wall is connected to the second top surface, and the periphery is connected to the top wall, the second side surface, and the first side surface, so the first coating layer and the second coating layer coat the magnetic layer inside the microbead. A preparation method of the microbead is also provided. The utilization rate of the microbead is improved.

Abstract: Methods, systems, and devices for wireless communication are described. A user equipment (UE) may determine separate uplink (UL) power limitations for multiple transmission time interval (TTI) durations based on distinct power control parameters. In some cases, an adjustment factor or a power backoff may be applied to communications using one TTI duration to ensure that total transmit power does not exceed a threshold. The UE and the serving base station may also identify one or more demodulation reference signal (DMRS) windows. UL data transmissions may be demodulated based on a DMRS sent during the same window. Transmit power control (TPC) commands may be applied at the beginning of each window. However, if an UL transmission is scheduled at the beginning of the window, the UE may wait until a DMRS transmission or until no more transmissions are scheduled for the window before applying the TPC adjustment.

Abstract: A process kit is provided. The process kit includes: a substrate support; and one or more electrical connectors, each electrical connector attached to the substrate support, each electrical connector including: a tube; a shaft including a rim, the rim positioned inside the tube, the shaft including a first portion above the rim and a second portion below the rim, wherein at least part of the first portion is configured to move outside of the tube, and the second portion is inside the tube; and a seal, wherein the rim directly underlies at least a portion of the seal.

Abstract: A method for correcting critical dimension (CD) measurements of a lithographic tool includes steps as follows. A correction pattern having a first sub-pattern parallel to a first direction and a second sub-pattern parallel to a second direction is provided on a lithographic mask; wherein the first sub-pattern and the second sub-pattern come cross with each other. A first After-Develop-Inspection critical dimension (ADI CD) of a developed pattern formed on a photo-sensitive layer and transferred from the correction pattern is measured using the lithographic tool along a first scanning direction. A second ADI CD of the developed pattern is measured using the lithographic tool along a second scanning direction. The first ADI CD is subtracted from the second ADI CD to obtain a measurement bias value. Exposure conditions and/or measuring parameters of the lithographic tool are adjusted according to the measurement bias value.

Abstract: A lens-free microscopic imaging system (11), which is used to image microbeads (15) with pattern codes, includes an illumination system (11a) and an imaging system (11b). The illumination system (11a) includes an illumination light source (111) and an excitation light source (112). The imaging system (11b) includes an image sensor (113). The illumination light source (111) is used to emit illumination light to irradiate the microbeads (15), causing the irradiated microbeads (15) to be imaged on the image sensor. The excitation light source (112) is used to emit excitation light to excite the microbeads (15) to generate specific signals. The image sensor (113) is used to collect the images of the microbeads (15) and the specific signals to generate images. The imaging system (11) does not require a lens system. The present disclosure improves a detection efficiency of the microbeads (15).

Abstract: Methods, systems, and devices are described for reference signal design in wireless communications. A base station may select a reference signal density scheme from a set of available density schemes associated with a port count. The reference signal density scheme may also be selected based on the category of the mobile device receiving the reference signal transmissions. The reference signal density scheme may be a higher density reference signal density scheme or a lower density reference signal density scheme, where the higher density reference signal density scheme includes more reference signal resource elements per subframe. The mobile device may determine the reference signal density scheme based on characteristics of a channel. The higher density reference signal density scheme may provide additional channel estimation opportunities for the mobile device. In some cases, the mobile device sends the channel estimated based on the received reference signals to the base station.