Abstract: A polymer composition includes a polyester, a multifunctional compound, and a polymeric compound containing a salt of a metal. The multifunctional compound is one of polyacid, polyanhydride, and the combination thereof. Based on the polymer composition, the metal is present in an amount ranging from 0.01 mol % to 5.0 mol %. Also disclosed herein are an article prepared from the polymer composition and a method for preparing a resin composition from the polymer composition.

Abstract: A liquid crystal polymer (LCP) composite film is provided. The LCP composite film includes 88 to 99 weight percent of a liquid crystal polymer based on the total weight of the LCP composite film and 1 to 12 weight percent of a toughening agent based on the total weight of the LCP composite film. The toughening agent includes a copolymer selected from a group consisting of a thermoplastic polyolefin elastomer, a glycidyl methacrylate copolymer, a polystyrene elastomer, a polyester elastomer, and a mixture thereof.

Abstract: A liquid crystal polymer (LCP) composite film is provided. The LCP composite film includes 88 to 99 weight percent of a liquid crystal polymer based on the total weight of the LCP composite film and 1 to 12 weight percent of a toughening agent based on the total weight of the LCP composite film. The toughening agent includes a copolymer selected from a group consisting of a thermoplastic polyolefin elastomer, a glycidyl methacrylate copolymer, a polystyrene elastomer, a polyester elastomer, and a mixture thereof.

Abstract: A composite film and a manufacturing method of the same are provided. The composite film includes an organic multilayer film and two inorganic gas barrier layers. The organic multilayer film comprises a hydrophobic polymer layer and two hydrophilic polymer layers formed on two opposite surfaces of the hydrophobic polymer layer, respectively. The two inorganic gas barrier layers are formed on the two hydrophilic polymer layers, respectively.

Abstract: A method for measuring an optoelectronic memory device, includes: grounding a source electrode of the optoelectronic memory device; applying a drain electrode voltage to a drain electrode of the optoelectronic memory device and measuring a first current at the drain electrode; using an optical source to illuminate the optoelectronic memory device and measure a first and a second current at the drain electrode; and comparing the sizes of the first current and the second current so as to judge the functional parameters of the optoelectronic memory device.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.

Abstract: The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.