Abstract: A green fluorescent ceramic material, a preparation method therefor and the use thereof, are applicable in the field of fluorescent ceramics for LED lighting. The chemical constitution of the green fluorescent ceramic material is graphene-Y3-x-yAl5O12:x Ce3+, y Lu3+, with 0.0001?x?0.1, and 0.01?y?2.9; and the mass percentage of graphene is less than 0.5 wt % but is not 0 on the basis of the total weight of the green fluorescent ceramic material. The green fluorescent ceramic material has the characteristics of a high heat conductivity, a good heat dissipation property, and a controllable light-emitting wavelength within a range of 490-540 nm; and same is suitable for use as an LED encapsulating material.

Abstract: A white light LED chip packaged in inorganic material, a device, a preparation method therefor, and an application thereof are provided. The white light LED chip includes an LED chip wafer, an inorganic material packaging layer and a single crystal substrate. The LED chip wafer has at least one flip or vertical LED chip. The inorganic material packaging layer packages the LED chip wafer. The inorganic material packaging layer has a fluorescent transparent ceramic piece or a fluorescent crystal piece.

Abstract: Aluminum oxynitride (AlON) powder, a synthesis method thereof by direct nitridation under high pressure and use thereof, which belongs to the field of ceramic powder are presented. In the method, pure-phase AlON powder is synthesized by direct nitridation under high pressure with aluminum powder and alumina powder as starting materials. The powder has a spherical-like morphology, with a particle size ranging from 5 ?m to 15 ?m. The powder has good dispersibility and uniformity, and higher sintering activity. AlON transparent ceramic (1.2 mm thick) prepared from the AlON powder has a linear transmittance of more than 84%. The batch yield is on kilogram-scale; therefore, the method is suitable for large-scale production of the AlON powder.

Abstract: A dual-channel heat-conducting encapsulation structure of a solid-state phosphor integrated light source has a solid-state phosphor, a transparent organic silica gel, LED chips and a substrate. The LED chips are arranged on the substrate. The dual-channel heat-conducting encapsulation structure also has heat-conducting columns fixed on the substrate, and the heat-conducting columns are disposed away from the LED chips; the solid-state phosphor is placed on the heat-conducting columns without contacting the LED chips; the transparent organic silica gel is filled in the gap between the solid-state phosphor and the substrate. By adopting the design of double heat-conducting channels, separates two heat sources of the LED light source to sufficiently conduct the heat, the heat of the solid-state phosphor and the LED chips reaches the substrate through the respective channels, and then is transferred from the substrate through the heat sink into the atmosphere.

Abstract: A die-bonding substrate has a substrate, and a conductive line layer and a chip array provided on the substrate. The conductive line layer includes a chip welding wire region and an external electrode region connected with each other. The chip welding wire region is composed of multiple conductive lines, wherein the central conductive line located in the central position of the chip welding wire region is a straight line section. The conductive lines arranged at both sides of the central conductive line are straight line sections at both ends, and arc sections curved outwards in the middle, so that the entire chip welding wire region forms a circular area. The array chips are arranged inside the circular area, and are electrically connected with the conductive lines arranged at both sides. The entire chip welding wire region can also form a rectangular area.

Abstract: A dual-channel heat-conducting encapsulation structure of a solid-state phosphor integrated light source has a solid-state phosphor, a transparent organic silica gel, LED chips and a substrate. The LED chips are arranged on the substrate. The dual-channel heat-conducting encapsulation structure also has heat-conducting columns fixed on the substrate, and the heat-conducting columns are disposed away from the LED chips; the solid-state phosphor is placed on the heat-conducting columns without contacting the LED chips; the transparent organic silica gel is filled in the gap between the solid-state phosphor and the substrate. By adopting the design of double heat-conducting channels, separates two heat sources of the LED light source to sufficiently conduct the heat, the heat of the solid-state phosphor and the LED chips reaches the substrate through the respective channels, and then is transferred from the substrate through the heat sink into the atmosphere.

Abstract: A die-bonding substrate has a substrate, and a conductive line layer and a chip array provided on the substrate. The conductive line layer includes a chip welding wire region and an external electrode region connected with each other. The chip welding wire region is composed of multiple conductive lines, wherein the central conductive line located in the central position of the chip welding wire region is a straight line section. The conductive lines arranged at both sides of the central conductive line are straight line sections at both ends, and arc sections curved outwards in the middle, so that the entire chip welding wire region forms a circular area. The array chips are arranged inside the circular area, and are electrically connected with the conductive lines arranged at both sides. The entire chip welding wire region can also form a rectangular area.

Abstract: The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO.

Abstract: The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO.

Abstract: The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO.