Abstract: The invention provides a method for coating top anti-reflective coating (TARC), which comprises the following steps: providing a turntable, placing a substrate above the turntable with a photoresist layer on the substrate, spraying deionized water on the photoresist layer, spraying a top anti-reflective coating liquid on the deionized water to mix the top anti-reflective coating liquid with the deionized water to form a mixed liquid, and performing a spin coating step to spin-coat and disperse the mixed liquid to form a top anti-reflective coating film on the photoresist layer.

Abstract: A reticle thermal expansion calibration method includes exposing a group of wafers and generating a sub-recipe, performing data mining and data parsing to generate a plurality of overlay parameters, extracting a plurality of predetermined parameters from the plurality of overlay parameters, performing a linear regression on each of the predetermined parameters, and generating a coefficient of determination for each of the predetermined parameters.

Abstract: A lithography film stack applied to an immersion lithography process includes a photoresist, a wavelength adjusting layer and a top coating layer. The photoresist is disposed on a substrate. The wavelength adjusting layer is disposed on the photoresist. The top coating layer is disposed on the wavelength adjusting layer. A refractive index of the wavelength adjusting layer is greater than a refractive index of the top coating layer and a refractive index of an immersion fluid of the immersion lithography process.

Abstract: A reticle thermal expansion calibration method includes exposing a first group of wafers and generating a first sub-recipe, performing data mining and data parsing to generate a plurality of overlay parameters, performing a linear regression on each of the overlay parameters, and generating a first coefficient of determination for each of the overlay parameters.

Abstract: A lithography film stack applied to an immersion lithography process includes a photoresist, a wavelength adjusting layer and a top coating layer. The photoresist is disposed on a substrate. The wavelength adjusting layer is disposed on the photoresist. The top coating layer is disposed on the wavelength adjusting layer. A refractive index of the wavelength adjusting layer is greater than a refractive index of the top coating layer and a refractive index of an immersion fluid of the immersion lithography process.

Abstract: A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels of only two grayscale levels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

Abstract: A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.

Abstract: A reticle thermal expansion calibration method includes exposing a group of wafers and generating a sub-recipe, performing data mining and data parsing to generate a plurality of overlay parameters, extracting a plurality of predetermined parameters from the plurality of overlay parameters, performing a linear regression on each of the predetermined parameters, and generating a coefficient of determination for each of the predetermined parameters.

Abstract: A method for aligning to a pattern on a wafer is disclosed. The method includes the steps of obtaining a first inline image from a first sample wafer, obtaining a first contour pattern of an alignment mark pattern from the first inline image, using the first contour pattern to generate a first synthetic image in black and white pixels, using the first synthetic image as a reference to recognize the alignment mark pattern on a tested wafer, and aligning to a tested pattern on the tested wafer according to a position of the alignment mark pattern on the tested wafer and a coordinate information.