Patents by Inventor Maoji Fujimori

Maoji Fujimori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 5132749
    Abstract: Doping a dopant into a diamond semiconductor causes lattice defects. The pn junction diode or the Schottky junction diode made from diamond has low break down voltage and high reverse leakage current owing to the lattice defects. A non-doped or low doped diamond layer with high resistivity is epitaxially grown between the N-type diamond layer and the p-type diamond layer in the pn junction diode or between the metal layer and the doped diamond layer in the Schottky diode. The intermediate layer heightens the break down voltage and decreases the reverse leakage current.
    Type: Grant
    Filed: March 6, 1991
    Date of Patent: July 21, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Hiromu Shiomi, Maoji Fujimori