Abstract: A method for rapidly detecting pesticides based on thin-layer chromatography (TLC) and enzyme inhibition principles. The method includes the following steps: cutting a TLC plate into a rectangle, and using one end of the rectangle to contact a sample extract to form a pesticide residue separation area; covering the other end of the rectangle with a small piece cut from filter paper or glass fiber and fixing on a piece of enzyme inhibition reaction test paper to form a pesticide enrichment area; pasting a side of the enzyme inhibition reaction test paper away from the pesticide residue separation area with a piece of filter paper immobilized with a chromogenic agent to form a substrate color development area; and performing color reaction.

Abstract: The present disclosure provides a device for full-wave field seismic source based on a gas explosion technology and a method for acquiring seismic data. The device includes a cylindrical explosion-proof metal outer barrel, and four sides of the explosion-proof metal outer barrel are fixedly connected to four high-strength steel plates. The device also includes a cylindrical explosion-proof metal gas explosion inner barrel and pipelines for injecting high-pressure air and high-pressure gas into the gas explosion inner barrel. A center of the gas explosion inner barrel is installed with an electronic ignition gun, which is connected to a GPS timing module connected to the electronic ignition gun. The device further includes a controller configured to control a seismic source of a gas explosion full-wave field.

Abstract: Disclosed are a GaN power device and a manufacturing method thereof. The GaN power device includes a substrate, and a buffer layer, a GaN channel layer and a barrier layer sequentially stacked on the substrate from bottom to top. The barrier layer is provided with a p-GaN cap layer and a p-GaN thin layer, and the p-GaN thin layer is configured to cover the surface of the barrier layer and is connected to the p-GaN cap layer; the upper surface of the barrier layer is also provided with an input electrode and an output electrode, and a control electrode is provided on the upper surface of the p-GaN cap layer. The control electrode and the p-GaN thin layer are located between the input electrode and the output electrode.

Abstract: Structures, devices and methods are provided for creating enhanced back barriers that improve the off-state breakdown and blocking characteristics in aluminum gallium nitride AlGaN/GaN high electron mobility transistors (HEMTs). In one aspect, selective fluorine ion implantation is employed when developing HEMTs to create the enhanced back barrier structures. By creating higher energy barriers at the back of the two-dimensional electron gas channel in the unintentionally doped GaN buffer, higher off-state breakdown voltage is advantageously provided and blocking capability is enhanced, while allowing for convenient and cost-effective post-epitaxial growth fabrication. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.